Direct detection of the transient superresolution effect of nonlinear saturation absorption thin films

Abstract

Using a strong nonlinear saturation absorption effect is one technique for breaking through the diffraction limit. In this technique, formation of a dynamic and reversible optical pinhole channel and transient superresolution is critical. In this work, a pump-probe transient detection and observation-experimental setup is constructed to explore the formation process directly. A Ge 2 Sb 2 Te 5 thin film with strong nonlinear saturation absorption is investigated. The dynamic evolution of the optical pinhole channel is detected and imaged, and the transient superresolution spot is directly captured experimentally. Results verify that the superresolution effect originates from the generation of an optical pinhole channel and that the formation of the optical pinhole channel is dynamic and reversible. A good method is provided for direct detection and observation of the transient process of the superresolution effect of nonlinear thin films.

Temperature dependent thermal conductivity and transition mechanism in amorphous and crystalline Sb2Te3 thin films

“…In these chalcogenide phase change materials, Ge-Sb-Te family 24,25 , such as Ge 2 Sb 2 Te 5 26 , Ge 1 Sb 2 Te 4 27 , and Ge 1 Sb 4 Te 7 28 , are the most popular chalcogenide phase change materials in actual applications. The typical Ge 2 Sb 2 Te 5 thin films have multi-functions 29 , such as super-resolution mask 30 , phase-selective florescence 31 and image lithography 32 .…”

Label‐free superresolution effect of nonlinear reverse saturation absorption thin films through difference method

“…And this method is an effective way to match the two beams that expends the utilisation of FED to the field of label‐free technique. Compared to other nonlinear superresolution techniques (Tominaga et al ., ; Helseth, ; Wei & Yan, ; Zhang & Wei, ; Ding & Wei, ; Ding et al ., ), NFD has smaller subdiffraction‐limit spot and the capability to have higher SNR. With NRSA effect, a higher light intensity corresponds to a smaller transmittance.…”

Image lithography in telluride suboxide thin film through controlling “virtual” bandgap

“…Chalcogenide thin films have been experimentally verified to be excellent inorganic resists through the etching selectivity between crystalline and amorphous states [12][13][14]. Besides, a transient superresolution effect also can be realized on chalcogenide materials based on nonlinear saturation absorption characteristics [15][16][17]. TeO x thin film, as one of chalcogenide materials, has been used for an optical disk memory and heat-mode inorganic photoresist [18][19][20].…”