Direct determination of threshold condition in DG-MOSFETs from the g/I curve

Abstract

a b s t r a c tIn this work we apply the current-based threshold voltage definition (equality between the drift and diffusion components of drain current) to intrinsic symmetric double-gate MOSFETs. We show that the half maximum point of the g m /I D (transconductance-to-current ratio) curve in the linear region corresponds exactly to the condition I Ddrift = I Ddiff when mobility variation is neglected. Numerical simulations show that the threshold voltages determined from the g m /I D curve and from the I Ddrift = I Ddiff condition differ by about / t /2 (one half of the thermal voltage) when considering realistic mobility variations. Simulation results show that the threshold voltages determined with the g m /I D procedure are close to those obtained with the Y (=I D = ffiffiffiffiffiffi g m p ) function method for a considerable range of silicon film thicknesses, channel lengths, and temperature values. The current-based procedure has also been successfully applied experimentally to a FinFET over a wide temperature range.

The zero temperature coefficient in junctionless nanowire transistors

“…1(a) and 1(b) using the charge-based method described in Ref. 12. The V TH values are presented in Fig.…”

A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction

“…A specific example of a well known and commonly used auxiliary function is the Transconductance-to-Current Ratio (TCR) [50,[59][60][61][62][63][64][65][66][67]. This function consists of the ratio of the two successive differential operators defined by setting a = 1 in (12), as indicated below:…”

“…Such transitional V T can be properly defined as the V G axis location that corresponds to a certain given fraction of the maximum value attained by the operator ratio in the sub-threshold region. For the case of TCR a fraction of its maximum in the sub-threshold region has been proposed to define the location of V T [60,62].…”

Low power and low voltage VT extractor circuit and MOSFET radiation dosimeter

“…LONG-CHANNEL MOSFET EXPRESSIONS[9]. I S IS THE SPECIFIC CURRENT, if IS THE FORWARD NORMALIZED CURRENT, i r IS THE REVERSE NORMALIZED CURRENT, n IS THE SLOPE FACTOR, IS THE THERMAL VOLTAGE, µ IS THE MOBILITY, W IS THE CHANNEL WIDTH, AND L IS THE CHANNEL LENGTH.…”