We report on the realization of CdTe solar cell photocurrent enhancement using an n-type CdSe heterojunction partner sputtered on commercial SnO 2 /SnO 2 :F coated soda-lime glass substrates. With high-temperature close-space sublimation CdTe deposition followed by CdCl 2 activation, this thin-film stack allows for substantial interdiffusion at the CdSe/CdTe interface facilitating a CdSe x Te 1 −x alloy formation. The bowing effect causes a reduced optical bandgap of the alloyed absorber layer and, therefore, leads to current enhancement in the long-wavelength region and a decrease in open-circuit voltage (V O C ). To overcome the V O C loss and maintain a high short-circuit current (J S C ), the CdTe cell configuration has been modified using combined CdS:O/CdSe window layers. The new device structure has demonstrated enhanced collection from both short-and long-wavelength regions as well as a V O C improvement. With an optimized synthesis process, a small-area cell using CdS:O/CdSe window layer showed an efficiency of 15.2% with a V O C of 831 mV, a J S C of 26.3 mA/cm 2 , and a fill factor of 69.5%, measured under an AM1.5 illumination without antireflection coating. The results provide new directions for further improvement of CdTe-based solar cells.