Direct experimental evidence of metastable epitaxial zinc-blende MgS

Abstract

High resolution transmission electron microscopy has provided direct experimental evidence of monocrystalline, single-phase zinc-blende MgS. The authors report the first high resolution images of a metastable β-MgS epilayer. This material naturally has rocksalt crystalline structure, but β-MgS was grown in this work by molecular beam epitaxy on a ZnSe∕MgS multilayer buffered GaAs (001) substrate using Mg and ZnS sources, following a simple procedure. A metastable β-MgS layer of up to 125nm thick has been examined using this technique. Embedded stacking faults are observed in the β-MgS thick epilayer.

Metastable II–VI sulphides: Growth, characterization and stability

“…XRI determinations of layer thickness are in agreement with cross-sectional TEM [20], and the sensitivity of the technique has been determined showing that relaxation in the structure that changes the strain state of the top A layer will remove the characteristic oscillations introduced by the B layer. XRI is therefore very sensitive to any perturbations in the crystallinity or relaxation of layer B.…”

Study of structural transition from metastable zinc blende to rocksalt crystal in molecular beam epitaxy MgS∕ZnSe∕GaAs multilayer system

“…This is a surprising result, for which the only analogous system is the phase change in the Zn 1−X Mn X Se/ GaAs system. 16 The geometry of the two sets of reflections reveals a cube-oncube epitaxial relationship between the ZB and RS phases, i.e., ͑001͒ZB ʈ ͑001͒RS and ͓100͔ZB ʈ ͓100͔RS with a rotation limited to 1°between the two lattices around ͓001͔. The ͑001͒ zone axis selected area diffraction ͑SAD͒ patterns taken over an area of several microns squared confirm the occurrence of the RS phase in both the samples.…”

“…Downloaded to IP: 120.117.138.77 On: Thu, 27 Nov 2014 02:22: 16 The results show that crossing stacking faults produce favorable sites for the transition from the metastable ZB phase to the stable RS bulk structure. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions.…”

A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties

“…Samples were prepared for cross-sectional TEM (XTEM) visualization in the same way as MgS/ZnSe multilayer samples examined previously [15], namely by mechanical grinding and dimpling down to 20 mm followed by ion beam thinning. In order to minimize further damage, the specimens were thinned with decreasing ion voltage from 4 to 2 KV and decreasing incidence angle from 121 to 61.…”