Microelectrode arrays
(MEAs) are widely used to study the behavior
of cells noninvasively and in real time. While the design of MEAs
focuses mainly on the electrode material or its application-dependent
modification, the passivation layer, which is crucial to define the
electrode area and to insulate the conducting paths, remains largely
unnoticed. Because often most cells are in direct contact with the
passivation layer rather than the electrode material, biocompatible
photoresists such as SU-8 are almost exclusively used. However, SU-8
is not without limitations in terms of optical transmission, optimal
cell support, or compatibility within polymer-based microfluidic lab
on chip systems. Here, we established a silicon nitride (SiN) passivation
by physical vapor deposition (PVD), which was optimized and evaluated
for impedance spectroscopy-based monitoring of cells. Surface characteristics,
biocompatibility, and electrical insulation capability were investigated
and compared to SU8 in detail. To investigate the influence of the
SiN passivation on the impedimetric analysis of cells, HEK-293 A and
MCF-7 were chosen as adherent cell models and measured on microelectrodes
of 50–200 μm in diameter. The results clearly revealed
an overall suitability of SiN as alternative passivation. While for
the smallest electrode size a cell line dependent comparable or slightly
decreased cell signal could be observed in comparison with SU-8, a
significant higher cell signal was observed for microelectrodes larger
than 50 μm in diameter. Furthermore, a high suitability for
the bonding of PEGDA and PDMS microfluidic structures on the SiN passivation
layer without any leakage could be demonstrated.