Direct growth of a 40 nm InAs thin film on a GaAs/Ge heterostructure by metalorganic chemical vapor deposition

Abstract

Selective area growth of InP on lithography-free, nanopatterned GaAs (001) by metalorganic chemical vapor deposition J. Vac. Sci. Technol. B 32, 011210 (2014); 10.1116/1.4855035Effect of the Al0.3Ga0.7As interlayer thickness upon the quality of GaAs on a Ge substrate grown by metalorganic chemical vapor depositionIn this paper, the authors directly grew an InAs thin film (40 nm) by metalorganic chemical vapor deposition on GaAs/Ge substrates by using flow-rate modulation epitaxy with an appropriate V/III ratio. The growth of a high-quality InAs thin film with periodic 90 misfit dislocations was related to a uniform monolayer In atom distribution at the InAs/GaAs interface. The In monolayer effectively minimized the difference between surface energy and strain energy, producing a stable interface during material growth. The authors also found that a tightly controlled V/III ratio can improve the quality of the InAs islands on the GaAs/Ge heterostructures, though it is not the key factor in InAs thin-film growth.