Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In0.53Ga0.47As template

Alcotte, Reynald; Martin, M.; Moeyaert, J.; Gergaud, P.; David, S.; Cerba, Tiphaine; Bassani, F.; Ducroquet, F.; Bogumilowicz, Y.; Baron, T.

doi:10.1016/j.tsf.2017.10.006

Cited by 7 publications

(3 citation statements)

References 23 publications

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“…The transition from an island-forming InAs growth to a 2D InAs growth can be obtained by a low pressure and low temperature growth, which matches the growth parameters of an InAs layer directly on Si published by Alcotte et al [17]. In this set-up, a 50 nm thick InAs layer with a RMS roughness of 0.9 nm and sharp GaSb/InAs interface can be reached [18].…”

Section: Resultssupporting

confidence: 80%

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

Cerba

Hauchecorne

Martin

et al. 2019

Journal of Crystal Growth

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We demonstrated the fabrication of a densely packed InAs fins network for nanoelectronic applications. High crystalline quality GaSb/InAs layers have been grown directly on 300 mm nominal (001)-Si substrate. The InAs was then processed by etching step using a lithographic mask based on block copolymer to obtain sub-20nm width fins. This block copolymer has been optimized to selfassemble into lamellar structure with a period of 30nm, standing perpendicular to the substrate thanks to a neutral layer. STEM-HAADF characterization displays vertical sidewalls InAs fins with a width as low as 15nm spaced by almost 10nm. Early electrical characterizations exhibit a current flow through the connected fins.

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Section: Resultssupporting

confidence: 80%

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

Cerba

Hauchecorne

Martin

et al. 2019

Journal of Crystal Growth

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“…These features correspond to the antiphase domains (APDs), which are regions formed from APBs [28,29]. The successful elimination of APBs has been achieved for GaAs grown on misoriented Si (100) substrate [8,11,17,30]. In this work, exactly oriented Si (100) substrates are used, thus the expected appearance of APBs.…”

Section: Resultsmentioning

confidence: 99%

“…In this work, an n-type undoped Si (100) substrate is used primarily because of the APBs dominantly present in GaAs lm grown on exact Si (100) substrate [4,5,8,11,17]. A Si (100) surface has monoatomic-height steps, which favor Ga-Ga and As-As bonding upon deposition of GaAs [8].…”

Section: Introductionmentioning

confidence: 99%

Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system

Gonzales

Prieto

Catindig

et al. 2021

J Mater Sci: Mater Electron

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Terahertz (THz) emission increase is observed for GaAs thin lms that exhibit structural defects. The GaAs epilayers are grown by molecular beam epitaxy on exactly oriented Si (100) substrates at three different temperatures (T s = 320ºC, 520ºC and 630ºC). The growth method involves the deposition of two low-temperature-grown (LTG)-GaAs buffers with subsequent in-situ thermal annealing at T s = 600ºC.Re ection high energy electron diffraction con rms the layer-by-layer growth mode of the GaAs on Si. Xray diffraction shows the improvement in crystallinity as growth temperature is increased. The THz timedomain spectroscopy is performed in re ection and transmission excitation geometries. At T s = 320ºC, the low crystallinity of GaAs on Si makes it an inferior THz emitter in re ection geometry, over a GaAs grown at the same temperature on a semi-insulating GaAs substrate. However, in transmission geometry, the GaAs on Si exhibits less absorption losses. At higher T s , the GaAs on Si thin lms emerge as promising THz emitters despite the presence of antiphase boundaries and threading dislocations as identi ed from scanning electron microscopy and Raman spectroscopy. An intense THz emission in re ection and transmission excitation geometries is observed for the GaAs on Si grown at T s = 520ºC, suggesting the existence of an optimal growth temperature for GaAs on Si at which the THz emission is most e cient in both excitation geometries. The results are signi cant in the growth design and fabrication of GaAs on Si material system intended for future THz photoconductive antenna emitter devices. Relevance SummaryDemonstration of GaAs integration on exact n-type undoped Si(100) by MBE using a two-layer LTG-GaAs buffer system. The buffer system allows for a controlled growth of relatively high-quality GaAs layers at different substrate temperatures as con rmed by in-situ RHEED, SEM, XRD diffraction and Raman spectroscopy. Utilization of Si substrates, which has a lower absorption in the THz region, to establish a GaAsbased THz emitter that is more effective in both re ection and transmission excitation geometries.The GaAs on Si material system will constitute a cost-effective THz photoconductive antenna device and likewise provide an improved refractive index matching with a Si lens mount.Con rmation of THz emission enhancement in GaAs on Si heterostructure, which is not solely dependent on high crystallinity but also on the presence of structural defects such as APBs.Validation of the reduced THz absorption losses in GaAs on Si structures advantageous for THz measurements in transmission excitation geometry.Establishment of GaAs on Si as a more effective material system even with the presence of structural defects over LTG-GaAs homostructure in the generation of THz radiation in both re ection and transmission excitation geometries.

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Suppression of self-organized surface nanopatterning on GaSb/InAs multilayers induced by low energy oxygen ion bombardment by using simultaneously sample rotation and oxygen flooding

Beainy

Cerba

Bassani

et al. 2018

Applied Surface Science

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Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In0.53Ga0.47As template

Cited by 7 publications

References 23 publications

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system

Suppression of self-organized surface nanopatterning on GaSb/InAs multilayers induced by low energy oxygen ion bombardment by using simultaneously sample rotation and oxygen flooding

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Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In0.53Ga0.47As template

Cited by 7 publications

References 23 publications

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system

Suppression of self-organized surface nanopatterning on GaSb/InAs multilayers induced by low energy oxygen ion bombardment by using simultaneously sample rotation and oxygen flooding

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InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET