Suppression of self-organized surface nanopatterning on GaSb/InAs multilayers induced by low energy oxygen ion bombardment by using simultaneously sample rotation and oxygen flooding

Beainy, Georges; Cerba, Tiphaine; Bassani, F.; Martin, M.; Baron, T.; Barnes, Jean‐Paul

doi:10.1016/j.apsusc.2018.02.009

Cited by 6 publications

(2 citation statements)

References 23 publications

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“…The transition from an island-forming InAs growth to a 2D InAs growth can be obtained by a low pressure and low temperature growth, which matches the growth parameters of an InAs layer directly on Si published by Alcotte et al [17]. In this set-up, a 50 nm thick InAs layer with a RMS roughness of 0.9 nm and sharp GaSb/InAs interface can be reached [18]. The presence of an InSb-like interfacial layer could not be confirmed by TEM image.…”

Section: Resultssupporting

confidence: 80%

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

Cerba

Hauchecorne

Martin

et al. 2019

Journal of Crystal Growth

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We demonstrated the fabrication of a densely packed InAs fins network for nanoelectronic applications. High crystalline quality GaSb/InAs layers have been grown directly on 300 mm nominal (001)-Si substrate. The InAs was then processed by etching step using a lithographic mask based on block copolymer to obtain sub-20nm width fins. This block copolymer has been optimized to selfassemble into lamellar structure with a period of 30nm, standing perpendicular to the substrate thanks to a neutral layer. STEM-HAADF characterization displays vertical sidewalls InAs fins with a width as low as 15nm spaced by almost 10nm. Early electrical characterizations exhibit a current flow through the connected fins.

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Section: Resultssupporting

confidence: 80%

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

Cerba

Hauchecorne

Martin

et al. 2019

Journal of Crystal Growth

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“…The quality of an experimental SIMS depth profile, that is how well the measured profile represents the original atomic distribution in the solid, depends on many parameters. Several factors can contribute to a broadening of the measured profile [71][72][73][74][75][76][77] : 1) surface roughness, 2) ballistic mixing, caused by interaction of energetic ions with the solid, and 3) instrumental factors: crater edge effects can influence the depth resolution; residual gas adsorption can produce molecular interferences which limit the dynamic range of a depth profile. These effects are relatively difficult to estimate.…”

Section: C-ge-si Layer Without Sic Formationmentioning

confidence: 99%

Chemoheteroepitaxy of 3C‐SiC(111) on Si(111): Influence of Predeposited Ge on Structure and Composition

Zgheib

Lubov

Kulikov

et al. 2021

Physica Status Solidi (a)

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Secondary ion mass spectroscopy, Fourier transformed infrared spectroscopy, ellipsometry, reflection high energy diffraction and transmission electron microscopy are used to gain inside into the effect of Ge on the formation of ultrathin 3C‐SiC layers on Si(111) substrates. Accompanying the experimental investigations with simulations it is found that the ultrathin single crystalline 3C‐SiC layer is formed on top of a gradient Si1–x–yGexCy buffer layer due to a complex alloying and alloy decomposition processes promoted by carbon and germanium interdiffusion and SiC nucleation. This approach allows tuning residual stress at very early growth stages as well as the interface properties of the 3C‐SiC/Si heterostructure. Useful yields of secondary ions of Ge in Si matrix and Si dimer are estimated.

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GaSb/Mn multilayers structures fabricated by DC magnetron sputtering: Interface feature and nano-scale surface topography

Calderón

Quiroz

Manso‐Silván

et al. 2022

J Mater Sci: Mater Electron

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Suppression of self-organized surface nanopatterning on GaSb/InAs multilayers induced by low energy oxygen ion bombardment by using simultaneously sample rotation and oxygen flooding

Cited by 6 publications

References 23 publications

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

Chemoheteroepitaxy of 3C‐SiC(111) on Si(111): Influence of Predeposited Ge on Structure and Composition

GaSb/Mn multilayers structures fabricated by DC magnetron sputtering: Interface feature and nano-scale surface topography

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Suppression of self-organized surface nanopatterning on GaSb/InAs multilayers induced by low energy oxygen ion bombardment by using simultaneously sample rotation and oxygen flooding

Cited by 6 publications

References 23 publications

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

Chemoheteroepitaxy of 3C‐SiC(111) on Si(111): Influence of Predeposited Ge on Structure and Composition

GaSb/Mn multilayers structures fabricated by DC magnetron sputtering: Interface feature and nano-scale surface topography

Contact Info

Product

Resources

About

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET