1994
DOI: 10.1063/1.112723
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Direct growth of heteroepitaxial CuInSe2 layers on Si substrates

Abstract: Heteroepitaxial CuInSe2 (CIS) layers have been directly grown on Si substrates by molecular beam epitaxy. Epitaxial growth is achieved by using a proper thermal treatment of the substrate prior to the growth and also during the initial stage of CIS growth. (100)-oriented and (112)-oriented CIS layers with chalcopyrite crystal structure, and free from impurity phases have been obtained on Si(100) and Si(111), respectively. Different methods have been used to study the growth kinetics and structural quality of t… Show more

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Cited by 36 publications
(22 citation statements)
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“…The peaks at 259, 102, and 156 cm −1 correspond to the Cu 2 Se, In 2 Se 3 , and OVC, respectively 22–24. Two weak peaks located at 212 and 229 cm −1 , are the B 2 and/or E modes of α‐CIS 17, 25, 26. The CA‐CIS phase has an energy formation difference of only 2 meV per atom with that of α‐CIS 14, 15.…”
Section: Resultsmentioning
confidence: 99%
“…The peaks at 259, 102, and 156 cm −1 correspond to the Cu 2 Se, In 2 Se 3 , and OVC, respectively 22–24. Two weak peaks located at 212 and 229 cm −1 , are the B 2 and/or E modes of α‐CIS 17, 25, 26. The CA‐CIS phase has an energy formation difference of only 2 meV per atom with that of α‐CIS 14, 15.…”
Section: Resultsmentioning
confidence: 99%
“…To give an example, films of CuInSe 2 have been grown using such methods as molecular beam epitaxy (MBE) [38][39][40], liquid-phase epitaxy [41], and halogen vapor phase epitaxy (VPE) [42]. But this methods are quite complicated, so the synthesis of core/shell materials based on an CIS core and organic surfactant as shell can be an interesting alternative on the development of the photovoltaic devices.…”
Section: Synthesis Strategies Of Core/shell Materialsmentioning
confidence: 99%
“…It is well known that the electronic properties of CIS are strongly dependent on the atomic composition, especially on the Cu-to-In metal ratio, as well as on the growth conditions [3][4][5]. Films grown under In-excess conditions often show high resistivity and small average grain size.…”
Section: Introductionmentioning
confidence: 99%