Time-of-flight secondary-ion mass spectrometry (TOF-SIMS), a powerful analytical technique sensitive to all components of perovskite solar cell (PSC) materials, can differentiate between the various organic species within a PSC absorber or a complete device stack. The ability to probe chemical gradients through the depth of a device (both organic and inorganic), with down to 100-nm lateral resolution, can lead to unique insights into the relationships between chemistry in the absorber bulk, at grain boundaries, and at interfaces as well as how they relate to changes in performance and/or stability. In this review, the authros briefly overview the technique; then, from the literature, several examples of how TOF-SIMS has been used to provide unique insight into PSC absorbers and devices are covered. Finally, the common artifacts that can be introduced if the data are improperly collected, as well as methods to mitigate these artifacts are discussed. due to stability improvements. 4,5,10,[13][14][15] Historically, the most commonly studied PSCs are of the form 3 . Despite the promise of PSCs, several barriers to broad commercial adoption remain.Key issues include unstable interfaces in PSC devices, solvent-exchange engineering, hysteresis and light soaking, narrow spectral absorption, and (perhaps) the need to reduce lead content. 4,5,12,13,[16][17][18][19][20] Attempts by the scientific community to address PSC stability through passivation of internal defects and interfaces have led to increasingly complex composition schemes and passivating additives. Many groups have studied PSC stability and proposed perovskite composition solutions, but the details of the fundamental degradation mechanisms are still difficult to remedy. The literature has identified moisture penetration into the lattice, oxidation, photo-induced reactions, temperature, and halogen diffusion, particularly at device surfaces and interfaces, as the most relevant degradation pathways. 4,5,13,17 Developing a robust toolkit of advanced characterization methods and techniques is crucial for further improvements in PSC technology. Other advanced