Direct measurement of Coulomb effects in electron beam projection lithography

Yahiro, Takehisa; Suzuki, Shingo; Irita, Takeshi; Hirayanagi, Noriyuki; Shimizu, Hiroyasu; Kojima, Shinichi; Morita, Kenji; Kawata, Shintaro; Okino, Teruaki; Suzuki, Kazuaki

doi:10.1116/1.1410089

Cited by 13 publications

(5 citation statements)

References 11 publications

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“…7 This method consisted of slit patterns on a Si membrane ͑2 m thick͒, two limiting apertures, and a sensor of a photodiode detector. 1͒.…”

Section: A Beam Blur Measurement Methodsmentioning

confidence: 99%

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Direct measurements and analyses of the Coulomb effects in electron projection lithography

Yamamoto¹,

Yamashita²,

Arimoto³

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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High-performance proximity effect correction for sub-70 nm design rule system on chip devices in 100 kV electron projection lithography Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography J.The Coulomb effects have been common problems in electron-beam lithography. In our previous article, we studied the influence of the Coulomb effects on electron projection lithography ͑EPL͒ process. In this paper, we analyze the Coulomb effects by direct blur measurements and by simulations. We found that there existed a beam blur around 32 nm at a low beam current ͑approximately 0 A͒. We found a relationship between the beam blur and the beam current that was 5.4 nm/ A, and this number agreed with our simulation work as well as with our experiment with resist resolution. We learned that at low current the blur was so small that a blur distribution could be practically ignored. An important finding we had, is that the beam blur did not only depend on the beam current but also on the pattern arrangement. We found the possibility of the existence of the local Coulomb effects and estimated its range to be around 100-120 m on our system. These phenomena should be taken into considerations when making proximity effect correction for highly accurate critical dimension control.

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“…7 This method consisted of slit patterns on a Si membrane ͑2 m thick͒, two limiting apertures, and a sensor of a photodiode detector. 1͒.…”

Section: A Beam Blur Measurement Methodsmentioning

confidence: 99%

“…Some of the space charge effect, an averaged electric field emulated analytically, can be corrected by refocusing. 7 We found that beam blur dependence on beam current was 5.4 nm/ A. In our previous paper 6 we analyzed the influence of the Coulomb effects on the EPL process based on our experimental results.…”

Section: Introductionmentioning

confidence: 94%

Direct measurements and analyses of the Coulomb effects in electron projection lithography

Yamamoto¹,

Yamashita²,

Arimoto³

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The beam current affects the results of the correction because the forward-scattering range, including the beam blur, increases as the beam current increases. 14) We divided the measured patterns and dummy patterns into different masks, which resulted in a small opening ratio for the mask containing the measured patterns. Large patterns, as shown in Fig.…”

Section: Complementary Mask Splitmentioning

confidence: 99%

Evaluation of Performance of Proximity Effect Correction in Electron Projection Lithography

Osawa¹,

Ogino²,

Hoshino³

et al. 2005

Jpn. J. Appl. Phys.

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We experimentally evaluated the overall performance of our proximity effect correction method in electron projection lithography. A Si stencil mask for corrected data was fabricated and then exposed using an electron-beam stepper. Shape modification resulted in high linewidth controllability and uniformity of critical dimension (CD) even when the pattern density changed. The deviation in linewidth was 6.6 nm in linearity, and 4.7 nm in the pattern density dependence of a 100 nm line. As well as shape modification, we reduced the pattern density of large patterns by replacing the interior area with mesh patterns in order to produce isolated space patterns. The meshes were well fabricated on the mask. Isolated spaces were successfully formed without resolving the mesh patterns on a resist.

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“…5,6 When higher beam current is used to improve throughput, the Coulomb effects, consisting of global space charge and stochastic Coulomb effects, 7,8 cause defocus and beam blur, compromising resolution. 1 and 2) is an attractive candidate for nextgeneration lithography because of its high-resolution capability of 65 nm or less, especially for contact hole and gate layers.…”

Section: Introductionmentioning

confidence: 99%

Influence of Coulomb effects on electron projection lithography process

Yamamoto¹,

Yamashita²,

Yamabe³

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inInfluence of proximity effects in electron-beam lithography on the optical properties of planar photonic-crystal waveguides J. Appl. Phys. 102, 083110 (2007); 10.1063/1.2801023 Direct measurements and analyses of the Coulomb effects in electron projection lithographya) J. Vac. Sci. Technol. B 23, 3182 (2005); 10.1116/1.2131085 Resolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process J. Vac. Sci. Technol. B 22, 136 (2004); 10.1116/1.1635850High-performance proximity effect correction for sub-70 nm design rule system on chip devices in 100 kV electron projection lithography Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography J.

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Direct measurement of Coulomb effects in electron beam projection lithography

Abstract: Demagnifying immersion magnetic lenses used for projection electron beam lithography without crossoversScaled measurements of global space-charge induced image blur in electron beam projection system

Cited by 13 publications

References 11 publications

Direct measurements and analyses of the Coulomb effects in electron projection lithography

Direct measurements and analyses of the Coulomb effects in electron projection lithography

Evaluation of Performance of Proximity Effect Correction in Electron Projection Lithography

Influence of Coulomb effects on electron projection lithography process

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