Influence of Coulomb effects on electron projection lithography process

Abstract

Articles you may be interested inInfluence of proximity effects in electron-beam lithography on the optical properties of planar photonic-crystal waveguides J. Appl. Phys. 102, 083110 (2007); 10.1063/1.2801023 Direct measurements and analyses of the Coulomb effects in electron projection lithographya) J. Vac. Sci. Technol. B 23, 3182 (2005); 10.1116/1.2131085 Resolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process J. Vac. Sci. Technol. B 22, 136 (2004); 10.1116/1.1635850High-performance proximity effect correction for sub-70 nm design rule system on chip devices in 100 kV electron projection lithography Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography J.

Proximity effect correction using blur map in electron projection lithography

“…2 Our direct measurement of beam blur distribution in a SF clearly revealed that the beam blur depended not only on the beam current but also on spatial pattern arrangement including local Coulomb effects. In electron projection lithography ͑EPL͒, 1 mask bias method is used for PEC because the subfield ͑SF͒, where a flat exposure dose is given, is much larger ͑250 m square on wafer͒ than an electron backscattering range of about 32 m for 100 keV electron beam.…”

“…The data processing is executed using a 10 PC cluster system. 2 Because the SCEC program solves a Poisson's equation to correct for the space charge effect, it takes a long time to do the calculation. Then, the process proceeds to PEC, followed by the mask layout and design rule check and verification.…”

Direct measurements and analyses of the Coulomb effects in electron projection lithography

“…In our previous work, 6 we observed the possibility of the local Coulomb effects because the blur in SF depended on the pattern arrangements even when the patterns were printed with the same beam current. This led us to investigate the local Coulomb effects.…”

Recent progress and future of electron multi-beam mask writer

“…In general, increasing beam current density will degrade beam resolution due to the Coulomb interaction effects. 30,[52][53][54][55][56] This will be addressed by optimizing the electron optical parameters that affect the effects. Optimizing writing strategy including the PLDC, which is related with M s and B b , is also a key element.…”