Direct measurement of local lattice distortions in strained layer structures by HREM

Bierwolf, R.; Hohenstein, M.; Phillipp, F.; Brandt, O.; Crook, G. E.

doi:10.1016/0304-3991(93)90234-o

Cited by 212 publications

(108 citation statements)

References 9 publications

Supporting

Mentioning

106

Contrasting

Unclassified

Order By: Relevance

“…Likewise in metallic specimens, understanding strain and its evolution under deformation will help further the understanding and predictive capabilities of the field. While many techniques of measuring strain exist [2,3,4,5,6,7,8,9], scanning convergent nanobeam electron diffraction (NBED) is attractive for a number of reasons. First, NBED strain mapping offers the potential of very high accuracy in strain measurement.…”

Section: Introductionmentioning

confidence: 99%

Optimizing disk registration algorithms for nanobeam electron diffraction strain mapping

et al. 2017

View full text Add to dashboard Cite

Scanning nanobeam electron diffraction strain mapping is a technique by which the positions of diffracted disks sampled at the nanoscale over a crystalline sample can be used to reconstruct a strain map over a large area. However, it is important that the disk positions are measured accurately, as their positions relative to a reference are directly used to calculate strain. In this study, we compare several correlation methods using both simulated and experimental data in order to directly probe susceptibility to measurement error due to non-uniform diffracted disk illumination structure. We found that prefiltering the diffraction patterns with a Sobel filter before performing cross correlation or performing a square-root magnitude weighted phase correlation returned the best results when inner disk structure was present. We have tested these methods both on simulated datasets, and experimental data from unstrained silicon as well as a twin grain boundary in 304 stainless steel.

show abstract

Section: Introductionmentioning

confidence: 99%

Optimizing disk registration algorithms for nanobeam electron diffraction strain mapping

et al. 2017

View full text Add to dashboard Cite

show abstract

“…Several effects have to be taken into account measuring the width of a strained layer from a high resolution image [16][17][18][19][20]; among them the effect of the crystal plane bending in the TEM thinned sample can produce a systematic error in the measurements [21][22][23][24][25][26]. This effect can be particularly severe in highly strained samples.…”

Section: Methodsmentioning

confidence: 99%

Strain Relaxation of Si/Ge Multilayers Investigated by Transmission Electron Microscopy and High-Resolution X-Ray Diffractometry

Carlino

Giannini

Tapfer

et al. 1995

Microsc. Microanal. Microstruct.

View full text Add to dashboard Cite

Abstract. 2014 In this work we investigate the strain-relief mechanisms and the formation of structural defects of Si/Ge multilayers grown by molecular beam epitaxy on (100)-Si substrates. The investigated specimens differ in number of periods, period thickness, and in the Si/Ge layer thickness ratio. The structural analyses are performed by transmission electron microscopy and high-resolution X-ray diffraction. We found that a Si-Ge interdiffusion induces a broadening of the nominal thickness of the Ge layer, producing a Six Ge1-x alloy as well as a higher Ge content in the last periods of the multilayer structure. Our measurements suggest that the strain relaxation occurs in two steps: i) in each period of the multilayer the strain energy density is partially reduced by the formation of coherent islands; ii) at a certain value of the strain energy density, the shape of the coherent islands changes and the structures, partially or completely, relax the accumulated strain energy by nucleation of dislocations. The increase of the strain energy density is related to the measured monotonic increase of the Ge content as a function of the growth time.

show abstract

“…The bulk lattice parameter of Ni is 14% less than that of Au so we would expect to see variations in the lattice fringe spacings in the image. Similar strained multilayers have been analysed by marking the positions of the peaks in intensity in the image, the separation of the peaks giving the local lattice fringe parameter [18][19][20]. The phase images should provide similar information given the relationship between the gradient of the phase and the local difference in reciprocal lattice fringe vector.…”

Section: Strained Metal Multilayersmentioning

confidence: 99%

Analysis of Variations in Structure from High Resolution Electron Microscope Images by Combining Real Space and Fourier Space Information

Hÿtch

1997

Microsc. Microanal. Microstruct.

115

View full text Add to dashboard Cite

Direct measurement of local lattice distortions in strained layer structures by HREM

Cited by 212 publications

References 9 publications

Optimizing disk registration algorithms for nanobeam electron diffraction strain mapping

Optimizing disk registration algorithms for nanobeam electron diffraction strain mapping

Strain Relaxation of Si/Ge Multilayers Investigated by Transmission Electron Microscopy and High-Resolution X-Ray Diffractometry

Analysis of Variations in Structure from High Resolution Electron Microscope Images by Combining Real Space and Fourier Space Information

Contact Info

Product

Resources

About