Direct measurement of stress dependent inversion layer mobility using a novel test structure

Okagaki, Takeshi; Tanizawa, Motoaki; Uchida, Tetsuya; Kunikiyo, T.; Sonoda, Keiichiro; Igarashi, M.; Ishikawa, K.; Takeda, Tadao; Lee, P.; Yokomizo, Goichi

doi:10.1109/vlsit.2004.1345428

Cited by 9 publications

(7 citation statements)

References 3 publications

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“…Furthermore, the effect of channel orientation on mobility-LOD trend is depicted in Fig. 9, which shows that the <100> channel direction is largely insensitive to STI stress similar to previously reported results by T. Okagaki [5]. However, PMOS trends in the <110> and <100> channel directions are quite different.…”

Section: Resultssupporting

confidence: 85%

Investigation and Modeling of Stress Interactions on 90 nm SOI CMOS with Various Mobility Enhancement Approaches

Lin¹,

Fang²,

Yeh³

et al. 2005

Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials

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The interactions of STI stress and various mobility enhancement approaches on SOI CMOS has been systematically studied. Strong interactions between STI stress and CESL (Contact Etch Stop Layer) stress on channel mobility was observed and attributed to the amplification of CESL channel tensile-stress under the reduced LOD (Length of Diffusion). In addition, an almost completely reversed PMOS mobility-LOD trend on <110>/(100) and <100>/(100) orientated SOI wafers was observed, which is induced by the reversed polarity of piezo-resistance coefficients. On the other hand, charge pumping leakage was increased by post-gate oxide stress (such as CESL stress) only, and did not be affected by any stress prior to gate oxidation step (such as STI stress). This observation implies that processes must be integrated very carefully while pursuing any mobility enhancement scheme via post-gate oxide stress.

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Section: Resultssupporting

confidence: 85%

Investigation and Modeling of Stress Interactions on 90 nm SOI CMOS with Various Mobility Enhancement Approaches

Lin¹,

Fang²,

Yeh³

et al. 2005

Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials

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“…As we can see, G M (mobility) of h100i channel NMOSFET are almost insensitive to the variation in LOD and thus STI stress, similarly to a previous report. 4) However, PMOSFET behavior shows a clear difference between devices with the h110i and h100i channel substrates, as shown in Fig. 8(b).…”

Section: Resultsmentioning

confidence: 95%

Investigation and Modeling of Stress Interactions on 90 nm Silicon on Insulator Complementary Metal Oxide Semiconductor by Various Mobility Enhancement Approaches

Lin

Fang

Yeh

et al. 2006

jjap

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Within the framework of the thermally activated process of the flux line or flux line bundles, and by time integration of the 1D equation of motion of the circulating current density J (ρ, t), which is suitable for thin superconducting films (R d, λ), we present numerical calculations of the current profiles, magnetization hysteresis loops and ac susceptibility χ n = χ n + iχ n for n = 1, 3 and 5 of a thin disc immersed in an axial time-dependent external magnetic field B a (t) = B dc + B ac cos(2πνt). Our calculated results are compared with those of the critical state model (CSM) and found to prove the approximate validity of the CSM below the irreversibility field. The differences between our computed results and those of the CSM are also discussed.

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“…Stress engineering related to the frontend process as well as the backend process of LSI is required [1][2][3][4][5][6][7]. As for shallow trench isolation (STI) structures, it was reported that a high stress field in the structure causes a variation in electrical characteristics [8].…”

Section: Introductionmentioning

confidence: 99%

Stress Field and Defect Evaluation with Shallow Trench Isolation Structure after Transistor Fabrication Processing by Raman and Cathodoluminescence Spectroscopies

Kodera¹,

Tsuchiya²,

Kakinuma³

et al. 2013

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials

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Direct measurement of stress dependent inversion layer mobility using a novel test structure

Cited by 9 publications

References 3 publications

Investigation and Modeling of Stress Interactions on 90 nm SOI CMOS with Various Mobility Enhancement Approaches

Investigation and Modeling of Stress Interactions on 90 nm SOI CMOS with Various Mobility Enhancement Approaches

Investigation and Modeling of Stress Interactions on 90 nm Silicon on Insulator Complementary Metal Oxide Semiconductor by Various Mobility Enhancement Approaches

Stress Field and Defect Evaluation with Shallow Trench Isolation Structure after Transistor Fabrication Processing by Raman and Cathodoluminescence Spectroscopies

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