2010
DOI: 10.1063/1.3456380
|View full text |Cite
|
Sign up to set email alerts
|

Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si

Abstract: Indentation at very low load rate showed region of constant volume with releasing load in crystalline ͑c-͒Si, indicating a direct observation of liquidlike amorphous phase which is incompressible under pressure. Signature of amorphization is also confirmed from load dependent indentation study where increased amount of amorphized phase is made responsible for the increasing elastic recovery of the sample with increasing load. Ex situ Raman study confirmed the presence of amorphous phase at the center of indent… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
6
0
1

Year Published

2011
2011
2022
2022

Publication Types

Select...
10

Relationship

0
10

Authors

Journals

citations
Cited by 24 publications
(8 citation statements)
references
References 20 publications
1
6
0
1
Order By: Relevance
“…1). The observed A and B load-declines mark pop-in events registered in depth-controlled experiments [3,9], similarly to the multiple pop-in phenomenon reported in early silicon research [12,15,25]. , concurring with a number of previous findings, e.g., [14], while remains at odds with others, e.g., [12,18].…”
supporting
confidence: 72%
“…1). The observed A and B load-declines mark pop-in events registered in depth-controlled experiments [3,9], similarly to the multiple pop-in phenomenon reported in early silicon research [12,15,25]. , concurring with a number of previous findings, e.g., [14], while remains at odds with others, e.g., [12,18].…”
supporting
confidence: 72%
“…The parameter values for P(VDF-TrFE) were taken from the reported piezoelectric constants evaluated experimentally based on converse piezoelectric method 22 23 while the properties for other materials including c-Si, Pt and PUA were taken from the literature 14 24 25 . A constant load was applied while the voltage was changed from 0 V to 5 V as shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The observation of dislocation plasticity was attributed to a special effect of free surface dislocation nucleation being favored in their test system. Alternatively, Das, Dhara, Jeng, Tsai, Hsu, Raj, Bhaduri, Albert, Tyagi, L. Chen and K. Chen [233] report direct observation of amorphization of p-type silicon under an indentation by means of accompanying in-situ Raman spectroscopy measurements at ~1 micrometer spatial resolution of the probing laser beam. Load-indentation depth curves were obtained under different low rate loading conditions, including pop-in observations and "pop-out" steps in the unloading curves.…”
Section: Electron Microscopymentioning
confidence: 99%