Abstract:Electrical properties of the wafer bonding p-GaAs/n-GaN, p-GaAs/n-Si and p-GaAs/ITO//ITO/n-Si are investigated systematically by scanning Kelvin probe force microscopy (KPFM), capacitance–voltage (C–V) and current–voltage (I–V) measurements. By using KPFM, the contact potential distributions and contact barrier differences of these bonding heterojunctions with Schottky-like characteristics or ohmic feature have been obtained. The contact barrier differences measured by KPFM match well with those measured by C–… Show more
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