Direct observation of reconstruction induced changes of surface stress for Sb on Si(111)

Kury, P.; Zahl, Percy; Hoegen, M. Horn‐von

doi:10.1007/s00216-003-2471-3

Cited by 4 publications

(1 citation statement)

References 44 publications

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“…The detailed study on the similar surface condition is reported elsewhere. [16][17][18][19][20][21][22] Figure 6 displays the UHV-STM image on the submonolayer of CuPc deposited on the prepared substrate above. The Sb passivated surface (dark) and CuPc domains (white) can be seen at the same time which confirms the submonolayer deposition.…”

Section: Resultsmentioning

confidence: 99%

Growth of Cu phthalocyanine thin films on Sb passivated vicinal Si(111) with molecular columns parallel to the surface

Suzuki

Yamada

Hietschold

et al. 2020

Jpn. J. Appl. Phys.

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This study shows a growth of copper phthalocyanine (CuPc) thin films with one-dimensional structures parallel to the surface on Sb-passivated stepped silicon surfaces with (111) orientation. Sb passivation maintains all the step and terrace features on the vicinal Si(111) surface, where subsequently a CuPc sub-monolayer is deposited. The CuPc forms islands of sub-micrometer extension, which shows substantial molecular diffusion on the surface after deposition. In a single island of CuPc, one-dimensional columns of stacked CuPc molecules grow parallel to the step edges of the vicinal Sb-Si(111) surface, which illustrates the strong anisotropy of molecular growth induced by the stepped surface. The selfassembly behavior of CuPc indicates that the Sb passivated surface allows high molecular mobility of CuPc, having anisotropy effect from the stepped substrate structure.

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Section: Resultsmentioning

confidence: 99%

Growth of Cu phthalocyanine thin films on Sb passivated vicinal Si(111) with molecular columns parallel to the surface

Suzuki

Yamada

Hietschold

et al. 2020

Jpn. J. Appl. Phys.

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Direct measurement of surface stress during Bi-mediated Ge growth on Si

et al. 2013

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Coverage dependence ofSb∕Si(111)adsorption and desorption modes: Interplay between chemical interactions and site transitions

et al. 2008

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The kinetic and thermodynamic properties of adsorption and desorption of Sb onto a Si͑111͒ surface are analyzed by mass spectrometry and ab initio calculations. Two domains of temperature are evidenced. At T Ͻ 600°C there is an irreversible adsorption involving a subtle competition between sticking, adsorption, then dissociation of Sb 4 tetramers associated to a partial reflection of Sb 4 molecules on the Sb-covered surface. At T Ͼ 800°C, Sb 4 molecules are dissociated close to the surface leading to a simple reversible adsorption/ desorption of Sb monomers. In this temperature range, adsorption/desorption isotherms can be recorded for various temperatures, which reveal a surprising behavior since quasi-Langmuir isotherms appear to be the consequence of a two-dimensional ͑2D͒ phase transition. More precisely, as shown by ab initio calculations, during the submonolayer adsorption process, the adsorption site evolves ͑as a function of coverage͒ from ternary towards on-top position and the character of the Sb-Sb effective interactions changes from repulsive towards attractive. The 2D phase transition close to Ϸ 0.7 ML seems to be associated to characteristic signatures in many other experiments. Then for high enough supersaturations, it is possible to overpass =1 ML by the formation of dimers, first partially located on top sites which repel one another, up to a second phase transition around = 1.3 ML in which dimers leave the on top sites and stand up to occupy almost vertically the hollow ones for building the second Sb layer. Lastly surfactant effect is quantified.

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Direct observation of reconstruction induced changes of surface stress for Sb on Si(111)

Cited by 4 publications

References 44 publications

Growth of Cu phthalocyanine thin films on Sb passivated vicinal Si(111) with molecular columns parallel to the surface

Growth of Cu phthalocyanine thin films on Sb passivated vicinal Si(111) with molecular columns parallel to the surface

Direct measurement of surface stress during Bi-mediated Ge growth on Si

Coverage dependence ofSb∕Si(111)adsorption and desorption modes: Interplay between chemical interactions and site transitions

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