1989
DOI: 10.1049/el:19890460
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Direct optical phase modulation in semiconductor laser amplifier

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Cited by 16 publications
(5 citation statements)
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“…where n is the refractive index of the active layer, dn/dN is the refractive-index shift coefficient, L is the length of the active region of the SOA, and ∆N (t) is the carrier density variation that is a function of the pump current change ∆I(t). It can be expressed by using an empirical value of dN/dI = 8 × 10 16 cm −3 mA −1 [13]…”
Section: Principle Of Operationmentioning
confidence: 99%
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“…where n is the refractive index of the active layer, dn/dN is the refractive-index shift coefficient, L is the length of the active region of the SOA, and ∆N (t) is the carrier density variation that is a function of the pump current change ∆I(t). It can be expressed by using an empirical value of dN/dI = 8 × 10 16 cm −3 mA −1 [13]…”
Section: Principle Of Operationmentioning
confidence: 99%
“…Taking the typical values dn/dN = −2 × 10 −20 cm 3 , L = 500 µm, and dN/dI = 8 × 10 16 cm −3 mA −1 [13] from (6) and (7), the phase change at 1550 nm that resulted from the external modulation is approximated to be…”
Section: Principle Of Operationmentioning
confidence: 99%
“…Therefore, it is necessary to look for other solutions to meet the requirements of the future alloptical signal processing. Traveling wave semiconductor laser amplifier used as optical phase modulator has been reported when its injection current is electrically modulated [5], [6].…”
Section: Introductionmentioning
confidence: 99%
“…It has been shown [1][2][3][4][5][6] that an injection locked semiconductor laser amplifier can be used as an optical phase modulator in coherent transmission systems. As a consequence of the intrinsic properties of the semiconductor material, modulation of the laser amplifier bias current will yield both amplitude modulation (AM) and phase modulation (PM) of the optical output signal.…”
Section: Introductionmentioning
confidence: 99%