1996
DOI: 10.1116/1.589089
|View full text |Cite
|
Sign up to set email alerts
|

Direct patterning of Si(001) surfaces by atomic manipulation

Abstract: Articles you may be interested inControlled manipulation of ethen molecules and lead atoms on Cu(211) with a low temperature scanning tunneling microscope Fabrication of gold nanostructures on a vicinal Si(111) 7×7 surface using ultrahigh vacuum scanning tunneling microscope and a gold-coated tungsten tip

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
4
0

Year Published

1998
1998
2007
2007

Publication Types

Select...
5
2
2

Relationship

0
9

Authors

Journals

citations
Cited by 12 publications
(4 citation statements)
references
References 15 publications
0
4
0
Order By: Relevance
“…Vertical processes involve atom transfers between the tip and the surface, voltage pulse or direct tip-surface contact being used for the atom transfers. Adsorbates or native surface atoms can be either permanently extracted by the tip 11,12,13,14,15,16,17,18,19,20,21,22 or redeposited in another location 23,24,25,26 . This mode has been theoretically studied by several groups 27,28,29,30,31,32,33 .…”
Section: Introductionmentioning
confidence: 99%
“…Vertical processes involve atom transfers between the tip and the surface, voltage pulse or direct tip-surface contact being used for the atom transfers. Adsorbates or native surface atoms can be either permanently extracted by the tip 11,12,13,14,15,16,17,18,19,20,21,22 or redeposited in another location 23,24,25,26 . This mode has been theoretically studied by several groups 27,28,29,30,31,32,33 .…”
Section: Introductionmentioning
confidence: 99%
“…Possibly the first (and most highly publicized) application of atomic manipulation enabled the precise positioning of individual xenon atoms on a (110) nickel surface to create the letters 'IBM', again in UHV and cooled to 4 K [13]. This process was also applied to semiconductors, and individual silicon atoms could be removed from and deposited on a Si(111)-7x7 surface [14], and individual dimers moved or 3 nm wide trenches created on Si(100) surfaces [15]. A variety of recent developments in technique may be found in [16].…”
Section: Requirements For Nanomanipulationmentioning
confidence: 99%
“…They can modify surfaces and structures at the nanometer scale. For example, a scanning tunneling microscope (STM) can draw lines on a hydrogen-passivated silicon surface by hydrogen removal, and can deposit gold dots or lines on a surface; see, e.g., the book by Wiesendanger (1994) and article by Salling (1996) for reviews of some of this work, which has been able to produce features that range from a few to hundreds of nanome-ters. Also, recently a "desktop factory" has been proposed for producing integrated circuits by STM-induced material deposition (Tabib-Azar and Litt 1997).…”
Section: Introductionmentioning
confidence: 99%