Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm

Significant improvements in III–V/Si epitaxy have pushed quantum dots (QDs) to the forefront of Si photonics. For efficient, scalable, and multifunctional integrated systems to be developed, a commercially viable solution must be found to allow efficient coupling of the QD laser output to Si waveguides. In this work, the design, fabrication, and characterization of such a platform are detailed. Record‐setting evanescent QD distributed feedback lasers on Si with a 3 dB modulation bandwidth of 13 GHz, a threshold current of 4 mA, a side‐mode‐suppression‐ratio of 60 dB, and a fundamental linewidth of 26 kHz, are reported. The maximum temperature during the backend III/V process is only 200 °C, which is fully compatible with CMOS process thermal budgets. The whole process is substrate agnostic and hence can leverage previous development in QD lasers grown on Si and benefit from the economy of scale. The broadband and versatile nature of the QD lasers and the Si‐on‐insulator low‐loss waveguiding platform can be expanded to build fully functional photonic integrated circuits throughout the O band.

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“…[ 33 ] Other reported modulation bandwidth of single wavelength QD laser integrated on a Si substrate is in the range of 4–7.5 GHz. [ 24,34,35 ]…”

Section: Measurement and Analysismentioning

confidence: 99%

“…This is much superior to the previously reported values in heterogeneous QW‐based DFB lasers with a surface grating (7.16 MHz), [ 37 ] and significantly outperforms QD DFB lasers without a Si waveguide, i.e., 480 kHz in ref. [35], 1.275 MHz in ref. [31], 5 MHz in ref.…”

Section: Measurement and Analysismentioning

confidence: 99%

High Speed Evanescent Quantum‐Dot Lasers on Si

Wan

Xiang

Guo

et al. 2021

Laser & Photonics Reviews

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“…In the C-band, 31 channels of 100 GHz spacing can be tuned digitally at a fixed temperature and ~40 nm of wavelength tuning range can be achieved by the assistance of TEC temperature control with a good SMSR of about 38 dB [11]. In addition, quantum dots (QD) V-cavity laser has also been proposed and achieved SMSR of 35 dB for 27 channels at 1310 nm [16]. Furthermore, VCLs have the advantage of simple fabrication process, easy control algorithm and high compactness.…”

Section: Introductionmentioning

confidence: 99%

Improved Half-Wave Coupled V-Cavity Laser Using Aggregating-Image Multimode Interference Coupler

Chen

Wang

Zhao³

et al. 2022

IEEE Photonics J.

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We theoretically analyze and experimentally demonstrate improved half-wave couplers for widely tunable V-cavity lasers. An overlapping-image 6×6 MMI coupler and an aggregating-image 16×16 MMI coupler are investigated, which give optimal coupling phase and coefficient for achieving high singlemode selectivity in V-cavity lasers while producing a low loss. A single-electrode controlled tuning of 38 channels is achieved with channel spacings of 100GHz and 150GHz. By combining two single-electrode tuning segments at different temperatures, a wavelength tuning range of 52 channels from 1515nm to 1585nm is obtained, and the side mode suppression ratios (SMSRs) reach 45 dB.

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“…For instance, Si photonics, in which Si-based monolithic light source remains as a missing component over decades, typically adopts plasma-assisted direct bonding of III-V die on SOI platform [47]. Although the III-V quantum-dot (QD) lasers monolithically grown on Si have been successfully demonstrated in recent years [48][49][50][51][52][53], the integration-incompatibility with other photonic components impedes the deployment on PICs; thus, heterogeneous integration of III-V lasers is the dominant approach in current Si photonics technology. However, the heterogeneous integration still suffers from high manufacturing cost and low integration density [54].…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial Growth of III-V Semiconductors on Silicon

et al. 2020

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Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs), since it provides enormous potential benefits, including versatile functionality, low-cost, large-area production, and dense integration. However, the material dissimilarity between III-V and Si, such as lattice constant, coefficient of thermal expansion, and polarity, introduces a high density of various defects during the growth of III-V on Si. In order to tackle these issues, a variety of growth techniques have been developed so far, leading to the demonstration of high-quality III-V materials and optoelectronic devices monolithically grown on various Si-based platform. In this paper, the recent advances in the heteroepitaxial growth of III-V on Si substrates, particularly GaAs and InP, are discussed. After introducing the fundamental and technical challenges for III-V-on-Si heteroepitaxy, we discuss recent approaches for resolving growth issues and future direction towards monolithic integration of III-V on Si platform.

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Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm

Cited by 31 publications

References 41 publications

High Speed Evanescent Quantum‐Dot Lasers on Si

High Speed Evanescent Quantum‐Dot Lasers on Si

Improved Half-Wave Coupled V-Cavity Laser Using Aggregating-Image Multimode Interference Coupler

Heteroepitaxial Growth of III-V Semiconductors on Silicon

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