Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

Chang, Kai; Liu, Junwei; Lin, Hsiu-Li; Wang, Na; Zhao, Kun; Zhang, Anmin; Jin, Feng; Zhong, Yong; Hu, Xiaopeng; Duan, Wenhui; Zhang, Qingming; Fu, Liang; Xue, Qi‐Kun; Chen, Xi; Ji, Shuai‐Hua

doi:10.1126/science.aad8609

Cited by 898 publications

(889 citation statements)

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“…Separately, a rapidly increasing number of two-dimensional (2D) van der Waals materials have been discovered, exhibiting a rich variety of emergent physical properties678910. These developments in principle may offer new and alternative opportunities for realizing ferroelectricity in the ultimate single-layer regime1112, especially with regard to the most technologically relevant polarizability perpendicular to the film direction.…”

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confidence: 99%

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

et al. 2017

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Interest in two-dimensional (2D) van der Waals materials has grown rapidly across multiple scientific and engineering disciplines in recent years. However, ferroelectricity, the presence of a spontaneous electric polarization, which is important in many practical applications, has rarely been reported in such materials so far. Here we employ first-principles calculations to discover a branch of the 2D materials family, based on In2Se3 and other III2-VI3 van der Waals materials, that exhibits room-temperature ferroelectricity with reversible spontaneous electric polarization in both out-of-plane and in-plane orientations. The device potential of these 2D ferroelectric materials is further demonstrated using the examples of van der Waals heterostructures of In2Se3/graphene, exhibiting a tunable Schottky barrier, and In2Se3/WSe2, showing a significant band gap reduction in the combined system. These findings promise to substantially broaden the tunability of van der Waals heterostructures for a wide range of applications.

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confidence: 99%

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

et al. 2017

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“…In particular, Chang et al have successfully grown few-layer SnTe and PbTe [18] [19]. In this article, we study two-dimensional (2D) lead chalcogenide PbX (X=S, Se, Te) monolayers in square geometry with two atoms per primitive cell.…”

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confidence: 99%

Two-dimensional square buckled Rashba lead chalcogenides

et al. 2017

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We propose the lead sulphide (PbS) monolayer as a 2D semiconductor with a large Rashba-like spin-orbit effect controlled by the out-of-plane buckling. The buckled PbS conduction band is found to possess Rashba-like dispersion and spin texture at the M and Γ points, with large effective Rashba parameters of λ ∼ 5 eVÅ and λ ∼ 1 eVÅ, respectively. Using a tight-binding formalism, we show that the Rashba effect originates from the very large spin-orbit interaction and the hopping term that mixes the in-plane and out-of-plane p orbitals of Pb and S atoms. The latter, which depends on the buckling angle, can be controlled by applying strain to vary the spin texture as well as the Rashba parameter at Γ and M . Our density functional theory results together with tight-binding formalism provide a unifying framework for designing Rashba monolayers and for manipulating their spin properties.Introduction-Over the past two decades there has been a growing interest in materials with strong spin-orbit interaction (SOI), as they are of a profound importance for fundamental understanding of quantum phenomena at the atomic level and applications to spintronics. This relativistic interaction is linked to important effects such as Rashba, Zeeman, spin-Hall effect, and topological insulator (TI) states [1][2][3][4].

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“…Aside from the theoretical predictions, the ferroelectricity in low‐dimensional vdW materials has also been realized in experiments. Using the molecular beam epitaxial technique, Chang et al have prepared atomic‐thick SnTe films and discovered stable in‐plane spontaneous polarization in SnTe film of only 1‐unit cell (UC) thickness . Moreover, the FE transition temperature Tc of 1‐UC SnTe film is greatly enhanced from the bulk value of 98K to as high as 270K, and 2‐ to 4‐UC SnTe films can even show robust ferroelectricity at room temperature.…”

Section: Exploration Of Low‐dimensional Ferroelectric Materialsmentioning

confidence: 99%

Progress and prospects in low‐dimensional multiferroic materials

Kan

2019

WIREs Comput Mol Sci

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Functional materials with ferroelectricity or multiferroicity based on two‐dimensional (2D) materials have been a fast developing field which attracts intensive investigations due to their potential applications and underlying new science. In this study, we review recent progress in theoretical simulation and experimental observation of low‐dimensional multiferroic materials, including exploring 2D van der Waals ferroelectrics, designing ferroelectrics or multiferroics by various manipulations such as chemical functionalization or external strain. The reported new physical mechanisms are also provided to explain the low‐dimensional multiferroics. We also discuss several exciting possibilities for design of devices based on these materials in novel applications. This article is categorized under: Structure and Mechanism > Computational Materials Science

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Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

Cited by 898 publications

References 47 publications

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

Two-dimensional square buckled Rashba lead chalcogenides

Progress and prospects in low‐dimensional multiferroic materials

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