Dislocation electrical conductivity of plastically deformed natural diamonds

Samsonenko, S. N.; Samsonenko, N. D.; Timchenko, V. I.

doi:10.1134/s1063782610090058

Cited by 6 publications

(3 citation statements)

References 6 publications

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“…The preferential neutral Although the 638 nm (NV -) center is strong (b), it is not an indicator of HPHT treatment in this case. One can assume that this stone was HPHT treated at a low temperature charge state of the NV defects in untreated type IIa diamonds could be due to high concentration of dislocations, which are deep acceptors in diamond lattice (Samsonenko et al 2010). The absence of the 575 nm (NV 0 ) center in both spectra indicates an appreciable concentration of C defects.…”

Section: Nm (The Nv 0 Center)mentioning

confidence: 95%

HPHT-Treated Diamonds

Dobrinets

Vins²,

Зайцев

2013

Springer Series in Materials Science

107

135

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Section: Nm (The Nv 0 Center)mentioning

confidence: 95%

HPHT-Treated Diamonds

Dobrinets

Vins²,

Зайцев

2013

Springer Series in Materials Science

107

135

View full text Add to dashboard Cite

“…The N2 center causes the appearance of a wide, isotropic single line with a g-factor of 2.003 in the EPR spectrum of diamond; the center does not have an unambiguous structural model. According to [37,38], its paramagnetism is due to broken C-C bonds in the central parts of dislocations; later studies [39] showed that nitrogen is also a part of the center. Finally, in the work [40], a model is put forward that assumes the decoration of deformation dislocations with nitrogen atoms.…”

Section: Epr Measurementsmentioning

confidence: 99%

Electron Paramagnetic Resonance Sensing of «Hidden» Atomistic and Cooperative Defects in Femtosecond Laser-Inscribed Photoluminescent Encoding Patterns in Diamond

Vyatkin,

Danilov,

Smirnov

et al. 2023

Photonics

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The changes that appeared in the crystal structure of a natural diamond under the influence of a pulsed femtosecond laser (525 nm) were comprehensively investigated using Fourier-transform infrared (FT-IR), electron paramagnetic resonance (EPR), and photoluminescence (PL) spectroscopy methods. It is shown that changes in the crystal structure occur due to the laser-driven interrelated process of the appearance and migration of interstitial carbon atoms and vacancies. On the one hand, there are atomistic transformations related to a decrease in the concentrations of structural centers that are not associated with vacancies or interstitial atoms—centers A (FT-IR spectroscopy) and P1 and W7 (EPR)—and an increase in the concentration of the H3, NV0, and NV− (PL) centers, which are associated with vacancies. On the other hand, there are indications of cooperative effects—an increase in the intensity of multi-atomic B2 (platelets, layers of interstitial carbon atoms (FT-IR)) and N2 (fragments of the structure with broken C–C bonds (EPR)) centers.

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“…Single-crystalline diamond, as is known, is an insulator, not a semiconductor. Since plastic deformation implies the appearance of both possible types of dislocations, significant plastic deformation of insulating diamonds results [6] in semiconductor diamonds, all of which without any exception have only the hole-type conduction.…”

Section: Original Research Article: Full Papermentioning

confidence: 99%

SPECIAL MECHANISM OF CONDUCTION TYPE INVERSION IN PLASTICALLY DEFORMED n-Si

Pagava

Chkhartishvili

Beridze

et al. 2019

EUREKA: Physics and Engineering

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The aim of research is studying the mechanism of n-p inversion of the conduction type of deformed silicon crystals in the course of their thermal treatment. Initially, almost non-dislocation zone-melted phosphorus-doped n-Si single crystals with electron (2019), «EUREKA: Physics and Engineering» Number 4 77 Fundamental and applied physics Original Research Article: full paper concentration of 2. 10 14 cm-3 were studied. Uniaxial compression at temperature of 700 °С and pressure of 25 MPa increased the dislocation density to 10 8 cm-2. After long (within 30 min) cooling of the deformed crystals to room temperature, an n-p inversion of the conduction type occurred. The effect is explained by the formation of phosphorus-divacancy complexes PV 2 in the defective atmosphere of dislocations, which are acceptor centers with energy level of E v +0.34 eV. The found out n-p inversion mechanism differs from the standard one for plastically deformed n-type semiconductors with a diamond-like crystalline structure, which consists in the formation of acceptor centers along edge dislocations.

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Dislocation electrical conductivity of plastically deformed natural diamonds

Cited by 6 publications

References 6 publications

HPHT-Treated Diamonds

HPHT-Treated Diamonds

Electron Paramagnetic Resonance Sensing of «Hidden» Atomistic and Cooperative Defects in Femtosecond Laser-Inscribed Photoluminescent Encoding Patterns in Diamond

SPECIAL MECHANISM OF CONDUCTION TYPE INVERSION IN PLASTICALLY DEFORMED n-Si

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