Dislocation motion and multiplication during the growth of silicon ribbon

Mechanics of shaped crystal growth from the melt

“…Using typical values of 1 MPa for the stress t and values for A from Table I, the dislocation density N must be of order 1 3 10 11 m 22 or 100 mm 22 for the back stress to completely counteract the applied stress. The Haasen-Alexander model was originally applied by Dillon, Tsai, and co-workers [33][34][35][36] to examine stress relief during EFG growth of Si for photovoltaic applications. It was extended to CZ growth of InP by Volkl et al 58 and Volkl and Muller, 59 to the growth of GaAs by Motakef, 60,61 and by Maroudas and Brown 62 to semiconductors via an asymptotic analysis of deformation and dislocation generation near the solid-liquid interface.…”

“…For example, analytical 29 and numerical solutions 30 for Bridgman growth, and numerical solutions for edge-defined film-fed growth (EFG) of Si sheets for photovoltaic applications. [31][32][33][34][35][36] Growth of Si shells has also been analyzed, 37,38 showing that an important aspect of the generation of thermal stresses in crystal growth is the appropriate length scale describing the crystal geometry [the radius in CZ growth of cylinders, the sheet width in EFG growth of sheets, ͑Rt͒ 1/2 for EFG growth of thin cylindrical shells, where R is the crystal radius and t the shell thickness].…”