1972
DOI: 10.1016/0001-6160(72)90186-1
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Dislocation nodes in boron carbide, with special reference to non-stoichiometry

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1973
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Cited by 18 publications
(9 citation statements)
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“…As a control rod material, the defect structure in neutron irradiated B 4 C was investigated by Ashbee [3,4], Jostsons [5,6], Hollenberg [7] and Donomae [8] et al He + implantation of B 4 C has been performed by Stoto [9] and Maruyama [10]. Irradiation effects and helium bubble formation in aluminum after high energy proton irradiation were reported by Singh and Victoria [11,12].…”
Section: Neutronsmentioning
confidence: 99%
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“…As a control rod material, the defect structure in neutron irradiated B 4 C was investigated by Ashbee [3,4], Jostsons [5,6], Hollenberg [7] and Donomae [8] et al He + implantation of B 4 C has been performed by Stoto [9] and Maruyama [10]. Irradiation effects and helium bubble formation in aluminum after high energy proton irradiation were reported by Singh and Victoria [11,12].…”
Section: Neutronsmentioning
confidence: 99%
“…As a control rod material, the defect structure in neutron irradiated B 4 C was investigated by Ashbee [3,4], Jostsons [5,6], Hollenberg [7] and Donomae [8] et al He + implantation of B 4 C has been performed by Stoto [9] and Maruyama [10]…”
Section: Introductionmentioning
confidence: 99%
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“…If the radiation interaction occurs in a semiconductor, for each neutron captured, ~1.5 x 10 6 electronhole pairs are produced as the energetic 7 Li and 4 He ions pass through the material [1,2]. This ionization generates a current that can be detected directly without further amplification.…”
Section: Introductionmentioning
confidence: 99%
“…The study of such imperfections or defects is important for understanding the influence of imperfections on crystal-growth processes, and conversely, such feedback can be used to optimize the process to produce higher quality crystals [4]. Hence, it is essential for process engineers and crystal growers to characterize and identify the density, distribution, and nature of defects present in crystals.…”
Section: Introductionmentioning
confidence: 99%