Disorder induced resistivity anomaly in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si13.gif" overflow="scroll"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ni</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>+</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">Sn</mml:mi></mml:mrow><mml:mrow><mml:mn>1

Singh, Sandeep; Pal, Soumyadipta; Biswas, Chandan

doi:10.1016/j.jallcom.2014.07.072

Cited by 12 publications

(2 citation statements)

References 42 publications

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“…This result confirms our previous studies [15]. With respect to Al nanofilms, the electron-magnon scattering results in a more T 1.5 item in the resistivity of Ni nanofilms in addition to the electron-phonon scattering [29,30]. When Ni atoms are doped into the Al lattices, the threedimension periodicity of the lattices is destroyed to result in a strong lattice disorder, accompanying a soft phonon vibration [31,32].…”

Section: Resultssupporting

confidence: 90%

Electrical transport in amorphous nanofilms embedded with crystalline grains at low temperatures

Zhu¹,

Dai²,

Li³

et al. 2020

Nanotechnology

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Amorphous and ferromagnetic Al-Ni nanofilms have been grown by the magnetron-sputtering method with some nanosized crystalline grains embedded therein. Resistivity is demonstrated to transit from a positive temperature coefficient to a negative temperature coefficient (NTC) with increasing the fraction of Ni atoms in the Al-Ni nanofilms. The lattice disorder is deduced to induce the Anderson localization of electrons and the formation of polarons so that the NTC of the resistivity is driven in the Al-Ni nanofilms, different from that in the elemental Al and Ni nanofilms. The electron transport in the Al-Ni nanofilms is dominated by polaron hopping while it is also determined by electron-magnon and electron-phonon scatterings. The electron-magnon scatterings are further revealed to have a more important contribution to the electron transport at low temperatures than electron-phonon scatterings in the amorphous Al-Ni nanofilms. A so-called polaron-metal physical model has thus been proposed to well explain the electron transport in disorder lattices with crystalline grains embedded therein. This study may help to optimize the design of nano-engineered devices.

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Section: Resultssupporting

confidence: 90%

Electrical transport in amorphous nanofilms embedded with crystalline grains at low temperatures

Zhu¹,

Dai²,

Li³

et al. 2020

Nanotechnology

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“…The abrupt increase of ρ(T) at T M is either due to antiferromagnetic exchange between Mn ions on Sn sites and Mn ions in the Mn sub lattice 36 or due to changes in the band structure caused by band Jahn-Teller distortion 37 or a combination of both mechanisms. It is to be highlighted that the resistivity in nonmagnetic shape memory alloy Ni 50 Ti 50 also shows abrupt increase at the martensitic transition, driven by Fermi surface nesting rather than by antiferromagnetic interactions 38 Hard X-ray photoelectron spectroscopy revealed a change in valence band structure across T M in Mn 2 NiGa.…”

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confidence: 99%

Magnetic field dependence of electrical resistivity and thermopower in Ni50Mn37Sn13 ribbons

et al. 2015

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We report magnetization, magnetoresistance (MR) and magnetothermopower (MTEP) of melt spun Ni 50 Mn 37 Sn 13 ribbons which exhibit an austentite to martensite phase transition at a temperature (T M ) ≈ 294 K. Upon cooling from 400 K, dcresistivity and thermopower show abrupt changes at T M , indicating a change in the electronic density of states. The thermopower is negative from 400 K down to 10 K. Application of a magnetic field of µ 0 H = 5 T decreases T M by 5 K and induces large negative MR (-23%) but positive MTEP (9%) near T M . While the MR is appreciable from T M down to 10 K, MTEP is significant only below 60 K (MR = -2.5% and MTEP = +300% at 10 K). The magnetic field dependence of resistivity and thermopower show either reversible or irreversible behavior near T M , depending on whether the sample is zero-field cooled or field-cooled, which indicates that the electronic band structure near T M is magnetic history dependent. C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. [http://dx

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Grain-Size-Dependent Low-Temperature Electrical Resistivity of Polycrystalline Co2MnAl Heusler Alloy Thin Films

Yilgin

Oogane

Ando

et al. 2016

J Supercond Nov Magn

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Disorder induced resistivity anomaly in Ni2Mn1+xSn1

Cited by 12 publications

References 42 publications

Electrical transport in amorphous nanofilms embedded with crystalline grains at low temperatures

Electrical transport in amorphous nanofilms embedded with crystalline grains at low temperatures

Magnetic field dependence of electrical resistivity and thermopower in Ni50Mn37Sn13 ribbons

Grain-Size-Dependent Low-Temperature Electrical Resistivity of Polycrystalline Co2MnAl Heusler Alloy Thin Films

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