Dissociation of a Product of a Surface Reaction in the Gas Phase:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow><mml:mi>XeF</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math>Reaction with Si

Hefty, R. C.; Holt, J.; Tate, M. R.; Gosalvez, D. B.; Bertino, Massimo F.; Ceyer, S. T.

doi:10.1103/physrevlett.92.188302

Cited by 11 publications

(16 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This type of reactivity/surface bonding has never been demonstrated on SiNC surfaces and is known for reconstructed Si(100)(2 1) surfaces, in which an aromatic ring readily loses its aromaticity as a result of a cycloaddition to Si = Si surface dimers. [33] Approximately 20 at % fluorine was noted in quantitative XPS analysis ( Figure S6) for these XeF 2 treated particles, [30,31] suggesting the presence of SiÀF bonds on the SiNC surfaces.…”

mentioning

confidence: 94%

“…[27] XeF 2 has long been used as an isotropic dry etchant for bulk silicon. [28,29] When it is exposed to Si surfaces at room temperature, XeF 2 produces large quantities of fluorine (FC) radicals [30,31] in close proximity to the Si surface, which cleave SiÀSi s bonds. In this context, one can imagine that FC radicals rapidly strip off surface Si atoms leaving dangling bonds, which can participate in silicon surface reactions.…”

mentioning

confidence: 99%

“…The FC radicals generated by XeF 2 [30,31] cleave surface SiÀSi bonds and remove some surface Si atoms to form hydrofluorosilanes; this process rapidly generates surface SiC radicals (Scheme 3). These species immediately attack the unsaturated bonds of suitable capping agents (e.g., alkenes, alkynes, or ketones) to form covalent surface linkages and a radical on the b-carbon atom of the new surface group.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Instantaneous Functionalization of Chemically Etched Silicon Nanocrystal Surfaces

et al. 2016

View full text Add to dashboard Cite

Remarkable advances in surface hydrosilylation reactions of C=C and C=O bonds on hydride-terminated silicon have revolutionized silicon surface functionalization. However, existing methods for functionalizing hydride-terminated Si nanocrystals (H-SiNCs) require long reaction times and elevated temperatures. Herein, we report a room-temperature method for functionalizing H-SiNC surfaces within seconds by stripping outermost atoms on H-SiNC surfaces with xenon difluoride (XeF 2 ). Detailed analysis of the reaction byproducts by in situ NMR spectroscopy and GC-MS provided unprecedented insight into NC surface composition and reactivity as well as the complex reaction mechanism of XeF 2 activated hydrosilylation.

show abstract

mentioning

confidence: 94%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

Instantaneous Functionalization of Chemically Etched Silicon Nanocrystal Surfaces

et al. 2016

View full text Add to dashboard Cite

show abstract

“…When a polyatomic molecule impinges upon a surface, it may be reflected (unreactive scattering), bind to the surface as an intact molecule (molecular adsorption), fragment into adsorbed components (dissociative adsorption), [1][2][3] or fragment into adsorbed and reflected components (abstraction). [4][5][6][7][8] The last two processes are usually exothermic; chemical bond formation between surface atoms and radicals derived from the parent molecule drives the reactions toward a lower energy state. However, a few previous studies have reported that endothermic chemisorption can occur under certain conditions.…”

Section: Introductionmentioning

confidence: 99%

Adsorption and abstraction reactions of HCl on a single Si(100) dangling bond

Chang

Chien

et al. 2011

Phys. Rev. B

View full text Add to dashboard Cite

On a Si(100)-(2x1) surface with abundant dangling bonds, reaction of HCl molecules at room temperature is dominated by exothermic dissociative adsorption of H and Cl on two adjacent dangling bonds. This co-adsorption reaction is blocked for an isolated dangling bond, yet surprisingly endothermic H or Cl abstractive adsorption occurs, as observed by in situ scanning tunneling microscopy. On an isolated dimer dangling bond pair, co-adsorption of H and Cl is common as expected, but adsorption of a pair of abstracted Cl or H from two HCl molecules also occurs. These results, complemented by theoretical calculations, indicate that dissociative adsorption and abstractive reaction of a multi-atom gas molecule can be initiated at a single DB by forming an intermediate adsorption state.

show abstract

“…8 As a result, the surface layer consists initially primarily of SiF for most reconstructed Si͑100͒ and Si͑111͒ surfaces with possibly some SiF 2 at step edges. Once dangling bonds are passivated, the next reaction step requires breaking of Si-Si backbonds which is an activated process with a much smaller reaction probability.…”

Section: A Initial Reaction Stepsmentioning

confidence: 99%

Roughening during XeF2 etching of Si(100) through interface layers: H:Si(100) and a-Si∕Si(100)

Stevens

Sanden

Beijerinck

et al. 2009

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Real-time spectroscopic ellipsometry has been applied in situ in an Ar + / XeF 2 beam-etching experiment to study the roughening of Si͑100͒ etched by XeF 2 at room temperature. The role of initial surface conditions has been examined. For the etching of hydrogen-terminated ͑H:͒Si͑100͒, the roughness evolution as a function of XeF 2 dose can be characterized by an initially fast roughening phase followed by a slower, final roughening phase. Similar behavior is observed when etching through an amorphous silicon ͑a-Si͒ layer on top of crystalline Si͑100͒ bulk as obtained by sputter cleaning of Si͑100͒ substrates. These observations can be explained as follows. Both H termination and a-Si lead to patch formation on the surface where etching is impeded and hence, high aspect-ratio etch pits develop. The quantitative differences in roughening can then be attributed to the duration and timing of the influence of the H-terminated and a-Si patches on the etch process until H-bonded Si surface atoms or a-Si are totally removed from the surface. Surface area increase due to the roughening can therefore be held responsible for observed trends and differences in etch rates, reaction layer thickness, and composition as a function of etch time.

show abstract

Dissociation of a Product of a Surface Reaction in the Gas Phase:XeF2Reaction with Si

Cited by 11 publications

References 11 publications

Instantaneous Functionalization of Chemically Etched Silicon Nanocrystal Surfaces

Instantaneous Functionalization of Chemically Etched Silicon Nanocrystal Surfaces

Adsorption and abstraction reactions of HCl on a single Si(100) dangling bond

Roughening during XeF2 etching of Si(100) through interface layers: H:Si(100) and a-Si∕Si(100)

Contact Info

Product

Resources

About