Dissolvable and biodegradable resistive switching memory based on magnesium oxide

Abstract

In this letter, dissolvable and biodegradable resistive switching devices with cell structure of Mg/MgO/Mg were demonstrated. Electrical tests demonstrated good memory characteristics for nonvolatile application. The dissolution rate of Mg and MgO are characterized in deionized (DI) water and in phosphate-buffered saline (PBS) solution, with clear difference, 0.36 nm/s, 1.25 nm/s, 0.057 nm/s and 0.13 nm/s, respectively. The Mg/MgO/Mg devices on silk fibroin substrates are able to be completely dissolved as fast as 30 minutes while immersed in DI water. The Mg/MgO/Mg devices have excellent prospects for applications in transient electronics, secure memory systems, and implantable medical therapy devices.Index Terms-resistive switching memory, magnesium oxide, transient electronics.

Biodegradable Natural Pectin‐Based Flexible Multilevel Resistive Switching Memory for Transient Electronics

“…The dissolving speed of Ag/pectin/ITO memory with common‐used Ag electrodes is comparable to those previous reported transient memories (as compared in Table 1 ) with Mg electrodes because of good solubility of pectin, demonstrating the excellent transient behaviors of the present memory. It is known that using dissolvable Mg as electrode can accelerate dissolution process due to the exothermic reaction of Mg and water . Noted that ultrafast dissolution within 4 s (which is among the fastest dissolution speed of RS memories ever reported, to the best of our knowledge) can be achieved in pectin memory when using dissolvable Mg to replace the ITO electrodes, and it will be reported in our other work.…”

“…Previously, transient electronic devices with biomaterials have already been developed, such as sensors, transistors, and light‐emitting diodes . As one important component, the memory devices when combed with transient feature can be desirably developed as secrecy information storage system besides the above advantage . Resistive switching (RS) memories are highly promising candidates for next‐generation nonvolatile memories owing to their high storage density, fast switching speed, and low power consumption …”

Influence of Nitrogen Concentration on Self‐Compliance Resistive Switching in Ta/SiNx/Pt RRAM Devices

“…Most of the resistive switching (RS) materials reported so far are metal oxides . Despite their promising performances in several aspects, the oxide‐based RS devices have few drawbacks such as high reset current and operation‐parameter fluctuation . Metal nitride films have high thermal conductivity, good insulating properties, and high dielectric constant, which are excellent features for RRAM applications .…”

Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application

“…Among various types of novel memory technologies, memristors play a critical role in nonvolatile memory applications, with a two‐terminal structure, which possess great advantages in high‐density data storage . Recent works have made great efforts in achieving physically transient memristors using various dissolvable materials to satisfy the requirements of transient information storage applications . Nonetheless, few studies have considered developing a highly integrated array of transient memristors.…”

“…As dissolution proceeded, the surface morphologies became coarse and nonuniform, and the resistance increased from 228 ohm to 2.13 × 10 9 ohm within 32 h, as shown in Figure S6a (Supporting information). With the EDS intensity of Cr estimated to be a constant (no noticeable change was observed in Cr adhesion layer), the dissolution kinetics of W could be considered as the variation of the normalized EDS intensity of W/Cr . The dissolution rates of W films in DI water at 25 °C and in PBS at 37 °C were calculated to be 1.25 and 3.34 nm h −1 , respectively, as shown in Figure b.…”