Distribution of bismuth atoms in epitaxial GaAsBi

Sales, D.; Guerrero, Elisa; Rodrigo-Ilarri, Javier; Galindo, Pedro L.; Yáñez, Andrés Suárez; Shafi, Muhammad; Khatab, A.; Mari, Riaz Hussain; Henini, M.; Новиков, С. В.; Chisholm, M. F.; Molina, S. I.

doi:10.1063/1.3562376

Cited by 43 publications

(20 citation statements)

References 14 publications

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“…Then the periodicity of the clusters within the GaAs matrix is $16Å Â 12Å within a single ML, which is comparable with Sales TEM observations of $ 20Å bulk spacing [15]. In the following the exciton's mean free path is taken to be that of GaAs: $20Å [16].…”

Section: Dynamic (2 â 1)mentioning

confidence: 75%

Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM

Bastiman

Cullis

David

et al. 2012

Journal of Crystal Growth

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Section: Dynamic (2 â 1)mentioning

confidence: 75%

Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM

Bastiman

Cullis

David

et al. 2012

Journal of Crystal Growth

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“…The images taken using aberration-corrected HAADF-STEM mode show a contrast of individual molybdenum and sulfur atoms distinguished clearly, which is typically named Z-contrast imaging [32]. In MoS 2 sheets, the HAADF-STEM images are collected in the [001] zone axis and considering the case of one-single layer (S-Mo-S) a hexagonal lattice is observed.…”

Section: Quantitative Analysismentioning

confidence: 99%

Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging

et al. 2014

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In this work we examined MoS2 sheets by aberration-corrected scanning transmission electron microscopy (STEM) at three different energies: 80, 120 and 200 kV. Structural damage of the MoS2 sheets has been controlled at 80 kV according a theoretical calculation based on the inelastic scattering of the electrons involved in the interaction electron-matter. The threshold energy for the MoS2 material has been found and experimentally verified in the microscope. At energies higher than the energy threshold we show surface and edge defects produced by the electron beam irradiation. Quantitative analysis at atomic level in the images obtained at 80 kV has been performed using the experimental images and via STEM simulations using SICSTEM software to determine the exact number of MoS2 layers.

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“…Sales et al studied the distribution of Bi in GaAsBi epi layers with a Bi content of 2.65% by STEM. They investigated Bi content column by column and the results indicated that Bi atoms were distributed homogeneously but there were certain areas showing nano-clustering [203]. Sterzer et al discussed the surface droplets for MOCVD grown GaAsBi [123] and pointed out the droplets were formed during growth, and then migrated and merged with the surrounding Bi droplets to form droplet clusters.…”

Section: Surfactant Effect and Segregationmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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Distribution of bismuth atoms in epitaxial GaAsBi

Cited by 43 publications

References 14 publications

Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM

Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM

Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

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