Distribution of impurities implanted in InSb and InAs before and after annealing

InAs Diodes Fabricated Using Be Ion Implantation

“…Results are summarized in Table I. Previous work reported errors of up to 24% in the straggle but the projected range was found to be accurate [9].…”

“…Using an implant energy of 80 keV and a dose up to 4 ×10 13 cm −2 , creating a peak Be concentration of 1.1 × 10 18 cm −3 , minimal lattice strain is introduced to the crystal and only point defects are formed after the implant. The Be profile before and after annealing of Be implanted InAs has been reported by Gerasimenko et al [9], [10]. When comparing the Be profile against a simulation generated using software package Transport of Ions in Matter (TRIM) [11], errors in the straggle of up to 24% were found.…”

“…TRIM was used to model the distribution of Be ions implanted into InAs. Simulations predicted that a flat doping profile to a depth of 0.75 μm, with the junction extending a total of 1 μm, could be realized from two 9 Be+ implants with conditions of 200 keV at 1×10 14 cm −2 and 70 keV at 3.8×10 13 cm −2 . The implantation was carried out at University of Surrey Ion Beam Center.…”