Distribution of irradiation damage in silicon bombarded with hydrogen

Chu, W. K.; Kastl, R. H.; Lever, R. F.; Mäder, Sebastian; Masters, B. J.

doi:10.1103/physrevb.16.3851

Cited by 77 publications

(19 citation statements)

References 21 publications

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“…2f. Such voids, after proton implantation, are a common observation [27][28][29][30][31] and can be ascribed to point defects (vacancies or interstitials) diffusion and agglomeration. In our case, the voids in the implanted material discretize the wall on length scale of around 10-20 nm.…”

mentioning

confidence: 99%

“Black” TiO₂ Nanotubes Formed by High-Energy Proton Implantation Show Noble-Metal-co-Catalyst Free Photocatalytic H₂-Evolution

et al. 2015

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Abstract:We apply high-energy proton ion-implantation to modify TiO 2 nanotubes selectively at their tops. In the proton-implanted region we observe the creation of intrinsic co-catalytic centers for photocatalytic H 2 -evolution. We find proton implantation to induce specific defects and a characteristic modification of the electronic properties not only in nanotubes but also on anatase single crystal (001) surfaces. Nevertheless, for TiO 2 nanotubes a strong synergetic effect between implanted region (catalyst) and implant-free tube segment (absorber) can be obtained. Keywords:nanotubes; photocatalysts; water-splitting; titania; self-organization; ion-implantation 2 Ever since 1972, when Honda and Fujishima introduced photolysis of water using a single crystal of TiO 2 , photocatalytic water splitting has become one of the most investigated scientific topics of our century [1]. The concept is strikingly simple: light (preferably sunlight) is absorbed in a suitable semiconductor and thereby generates electron-hole pairs. These charge carriers migrate in valence and conduction bands to the semiconductor surface where they react with water to form O 2 and H 2 , respectively. Thus hydrogen, the energy carrier of the future, could be produced using just water and sunlight.Key factors for an optimized conversion of water to H 2 are i) as complete as possible absorption of solar light (small band gap) while ii) still maintaining the thermodynamic driving force for water splitting (sufficiently large band-gap), including suitable band-edge positions relative to the water red-ox potentials, and iii) possibly most challenging -a sufficiently fast carrier transfer from semiconductor to water to obtain a reasonable reaction kinetics as opposed to carrier recombination or photo-corrosion [2][3][4][5][6][7].In spite of virtually countless investigations on a wide range of semiconductor materials that in many respects are superior to titania (mostly in view of solar light absorption and carrier transport), TiO 2 still remains one of the most investigated photocatalysts. This is only partially due to suitable energetics but more so because of its outstanding (photo-corrosion) stability [2][3][4][5][6][7].In general, the main drawbacks of TiO 2 are on the one hand its too large band-gap of 3-3.2 eV that allow only for about 7% of solar light absorption, and on the other hand that although a charge transfer to aqueous electrolytes is thermodynamically possible, the kinetics of these processes at the TiO 2 /water interface are extremely slow if no suitable co-catalysts such as Pt, Au, Pd or similar are used [8][9][10]. Mao demonstrated a significantly increased photocatalytic activity for water splitting when black TiO 2 was loaded with a Pt co-catalyst and used under bias-free conditions (i.e. used directly as a nanoparticle suspension in an aqueous/methanol solution under sunlight (AM 1.5) conditions). The high catalyst activity was attributed to a thin amorphous TiO 2 hydrogenated layer that was formed under high pressure tre...

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confidence: 99%

“Black” TiO₂ Nanotubes Formed by High-Energy Proton Implantation Show Noble-Metal-co-Catalyst Free Photocatalytic H₂-Evolution

et al. 2015

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“…The focus of this study is the comparison of high dose H + implants with low energies (400 keV) and high energies (4 MeV). As was reported in various studies [22][23][24] the implantation of high doses of low energy (≤ 400 keV) protons into silicon results in the formation of platelet structures. Figure 4 shows a TEM image of silicon im- As can be seen the platelet structures are formed in the {111} and {100} planes as reported in literature for (100) grown silicon wafers implanted with high doses of hydrogen ions [21][22][23][24].…”

Section: ×10mentioning

confidence: 78%

“…These platelets grow during an annealing step between 400 °C and 600 °C after the implantation. When the implantation dose is high enough, the implanted semiconductor can be splitted at the implantation depth [24]. The implanted hydrogen promotes the splitting process due to a chemical saturation of the dangling silicon bonds created during the implantation [25].…”

Section: Introduction Because Protons (H +mentioning

confidence: 99%

High dose proton implantations into silicon: a combined EBIC, SRP and TEM study

Kirnstoetter

Faccinelli

Gspan

et al. 2014

Phys. Status Solidi C

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Proton (H+) implantations are used in power semiconductor devices to introduce recombination centers (Hazdra et al., Microelectron. J. 32(5), 449–456 (2001)) or to form hydrogen related donor complexes (Zohta et al., Jpn. J. Appl. Phys. 10, 532–533 (1991)). Proton implantations are also used in the 'smart cut' process to generate defects that can be used to cleave thin wafers (Romani and Evans, Nucl. Instrum. Methods Phys. Res. B 44, 313–317 (1990)). However, the implantation damage resulting from H+implantations is not completely understood. In this study, protons with energies from 400 keV up to 4 MeV and doses up to 1016 H+/cm² were implanted into highly ohmic boron doped m:Cz silicon (100). Electron Beam Induced Current (EBIC) measurements were performed to locally determine the minority charge carrier diffusion length. The diffusion length decreases with increasing implantation dose and incorporated damage. Spreading Resistance Profiling (SRP) measurements were performed to analyze the charge carrier concentration profiles for different annealing procedures. The electrical activation and growth of the defect complexes varies strongly with the annealing parameters. Transmission Electron Microscopy measurements were made to investigate the microscopic structures formed by the high dose implantation processes. Due to the high local damage density resulting from low energy and high dose H+ implants, platelet structures are formed. During high‐energy high‐dose H+implantations, the implanted hydrogen generates strain in the crystal lattice resulting in changes in the distances between atomic planes. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…In 1977, Chu et al realized the first ion cutting experiment by implanting hydrogen ions in silicon (Chu et al, 1977). The annealing of the samples led to the exfoliation of the silicon layer above the implantation zone.…”

Section: Introductionmentioning

confidence: 99%

Lattice Strain Measurements in Hydrogen Implanted Materials for Layer Transfer Processes

Moulet¹,

Goorsky²

2012

Ion Implantation

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Distribution of irradiation damage in silicon bombarded with hydrogen

Cited by 77 publications

References 21 publications

“Black” TiO₂ Nanotubes Formed by High-Energy Proton Implantation Show Noble-Metal-co-Catalyst Free Photocatalytic H₂-Evolution

“Black” TiO₂ Nanotubes Formed by High-Energy Proton Implantation Show Noble-Metal-co-Catalyst Free Photocatalytic H₂-Evolution

High dose proton implantations into silicon: a combined EBIC, SRP and TEM study

Lattice Strain Measurements in Hydrogen Implanted Materials for Layer Transfer Processes

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Distribution of irradiation damage in silicon bombarded with hydrogen

Cited by 77 publications

References 21 publications

“Black” TiO2 Nanotubes Formed by High-Energy Proton Implantation Show Noble-Metal-co-Catalyst Free Photocatalytic H2-Evolution

“Black” TiO2 Nanotubes Formed by High-Energy Proton Implantation Show Noble-Metal-co-Catalyst Free Photocatalytic H2-Evolution

High dose proton implantations into silicon: a combined EBIC, SRP and TEM study

Lattice Strain Measurements in Hydrogen Implanted Materials for Layer Transfer Processes

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“Black” TiO₂ Nanotubes Formed by High-Energy Proton Implantation Show Noble-Metal-co-Catalyst Free Photocatalytic H₂-Evolution

“Black” TiO₂ Nanotubes Formed by High-Energy Proton Implantation Show Noble-Metal-co-Catalyst Free Photocatalytic H₂-Evolution