Distribution of recombination current in emitter-base junctions of silicon transistors

Coppen, P.J.; Matzen, W.T.

doi:10.1109/t-ed.1962.14892

Cited by 21 publications

(1 citation statement)

References 3 publications

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“…However, as the diode is etched for successively longer periods of time, the value for n decreases and after 5 min n ~ 2. The current-voltage behavior of the unetched GaP diode with n > 2 is consistent with the presence of nonradiative recombination centers at the surface as discussed by Sah and others (3)(4)(5).…”

Section: Electrical and Optical Measurementssupporting

confidence: 85%

Dicing Induced Damage in GaP Electroluminescent Diodes

Schumaker¹,

Rozgonyi²

1972

J. Electrochem. Soc.

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Batch processing of GaP electrolumineseent (EL) diodes requires that the GaP wafer be separated into individual devices before lead bonding and final packaging. This paper describes an investigation of the effects of this mechanical dicing operatlon on the EL characteristics of GaP diodes. Chemical etching of the diced GaP diode after lead bonding has been found to be essential in achieving the maximum quantum efficiency of the completed device. The etchant used is a 3: I: 1 solution of H2804, 33% H202, and H20 at 60~ The quantum efficiency is found to be dependent on the etching time with the efficiency reaching a maximum after approximately 5 rain.Efficiency and current-voltage measurements on unetched devices indicate the presence of surface leakage currents which decrease the external quantum efficiency of the completed device. Since it is believed that the presence of a damaged surface layer and its associated strain field can provide nonradiative leakage current paths, x-ray topography has been used to detect the existence of dicing-induced strain fields and to follow their removal as a function of etch time. X-ray topographs have also been obtained for samples initially cut with a wire saw and a diamond saw. Etching of the completed GaP diode effectively relieves the dicing-induced strain field and eliminates the surface leakage paths. This results in a device with maximum quantum efficiency and with reproducible current-voltage characteristics.

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Section: Electrical and Optical Measurementssupporting

confidence: 85%