2014
DOI: 10.1016/j.matlet.2014.06.004
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Distribution of residual strain around nanoindentations in silicon

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Cited by 9 publications
(10 citation statements)
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“…The tangled structure not only inhibits the subsequent motion of dislocation on identical slip plane but also leads to machined surface work-hardening. Corresponding to this, as demonstrated in Cheng’s experiments [ 39 ], the plastic deformation can be generated in monocrystalline silicon by a laser shock peening experiments, which showed that shock pressure could lead to the tangled structure among dislocations and improve the ability of anti-deform in Figure 12 b. Furthermore, in order to reveal the failure essence of brittle material, the RC model has been divided into the PSBs zone and free-dislocations zone in Figure 13 a.…”
Section: Resultssupporting
confidence: 56%
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“…The tangled structure not only inhibits the subsequent motion of dislocation on identical slip plane but also leads to machined surface work-hardening. Corresponding to this, as demonstrated in Cheng’s experiments [ 39 ], the plastic deformation can be generated in monocrystalline silicon by a laser shock peening experiments, which showed that shock pressure could lead to the tangled structure among dislocations and improve the ability of anti-deform in Figure 12 b. Furthermore, in order to reveal the failure essence of brittle material, the RC model has been divided into the PSBs zone and free-dislocations zone in Figure 13 a.…”
Section: Resultssupporting
confidence: 56%
“…In particular, due to the low self-diffusion of monocrystalline silicon, restricted dislocation cannot bypass the dislocation obstacles and impurity particles by climbing [ 38 ]. Therefore, most movable objects are obstructed at the end of loading stages, as shown in Figure 8 d. It is worth noting that the dislocation configurations are consistent with the microstructure arrangement of monocrystalline silicon after warm laser shock peening [ 39 ].…”
Section: Resultsmentioning
confidence: 76%
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“…Recently, electron backscattered diffraction (EBSD) has become an increasingly important non-destructive technique for measuring the residual strain on the surface of crystalline materials with high spatial resolution (<50 nm) [15,16]. Using cross-correlation analysis of the EBSD pattern, strain sensitivity on the level of about 10 −4 has already been obtained [17].…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, the crystal orientation has a significant influence on the mechanical properties of anisotropic materials. Investigating the mechanical anisotropy of materials is of great significance for improving the processing parameters of a material, and obtaining good surface quality and better design tools [20][21][22].…”
Section: Introductionmentioning
confidence: 99%