Domain formation in diamond nucleation on iridium

Schreck, M.; Bauer, Th.; Gsell, S.; Hörmann, F.; Bielefeldt, H.; Stritzker, B.

doi:10.1016/s0925-9635(02)00361-8

Cited by 51 publications

(32 citation statements)

References 19 publications

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“…These islands are very similar to the so called "domains" which we observe as bright areas in the SEM after the BEN step in our MWPCVD setup [11]. Applying a subsequent growth step it was shown that only out of these domains diamond grains start to grow with an extraordinarily high density and epitaxial alignment.…”

Section: Introductionsupporting

confidence: 71%

Combined AFM–SEM study of the diamond nucleation layer on Ir(001)

Gsell

Schreck

Benstetter

et al. 2007

Diamond and Related Materials

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Section: Introductionsupporting

confidence: 71%

Combined AFM–SEM study of the diamond nucleation layer on Ir(001)

Gsell

Schreck

Benstetter

et al. 2007

Diamond and Related Materials

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“…4͒. This behavior is quite different from the one reported for BEN-MWCVD process on iridium [11][12][13] and silicon. 14 On iridium, diamond-oriented particles are agglomerated forming domains.…”

Section: Discussioncontrasting

confidence: 59%

“…14 On iridium, diamond-oriented particles are agglomerated forming domains. [11][12][13] On the other hand, for silicon, an enhanced surface mobility of active species during BEN leads to a depletion zone around each diamond nucleus. 14 In the later case, the measured distributions were shifted to larger distances compared to the random case.…”

Section: Discussionmentioning

confidence: 99%

Effects of the bias enhanced nucleation hot-filament chemical-vapor deposition parameters on diamond nucleation on iridium

Arnault

Schull

Polini

et al. 2005

Journal of Applied Physics

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The effects of the bias current density and the filament-to-substrate distance on the nucleation of diamond on iridium buffer layers were investigated in a hot-filament chemical-vapor deposition ͑HFCVD͒ reactor. The nucleation density increased by several orders of magnitude with the raise of the bias current density. According to high-resolution field-emission gun scanning electron microscopy observation, diamond nuclei formed during bias-enhanced nucleation ͑BEN͒ did not show any preferred oriented growth. Moreover, the first-nearest-neighbor distance distribution was consistent with a random nucleation mechanism. This occurrence suggested that the diffusion of carbon species at the substrate surface was not the predominant mechanism taking place during BEN in the HFCVD process. This fact was attributed to the formation of a graphitic layer prior to diamond nucleation. We also observed that the reduction of the filament sample distance during BEN was helpful for diamond growth. This nucleation behavior was different from the one previously reported in the case of BEN-microwave chemical-vapor deposition experiments on iridium and has been tentatively explained by taking into account the specific properties and limitations of the HFCVD technique.

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“…1c shows the typical roughening with 2-3 nm deep grooves which are aligned parallel to Ir<110> [22,23]. In former studies it was shown that the diamond nuclei are gathered in the domains which exhibit a bright contrast in SEM micrographs recorded with an annular in-lens (IL) detector [15]. These domains are completely absent on BEN sample A, which clearly indicates that successful diamond nucleation has not taken place.…”

Section: Resultsmentioning

confidence: 99%

“…After successful diamond nucleation we observe a characteristic pattern formation, i.e. the epitaxial diamond nuclei are gathered in specific areas, which are called "domains" [15]. In a recent X-ray absorption study it was shown that a large fraction of the carbon atoms within these domains reside in a diamond structure but a reliable quantification was not possible with this technique [16].…”

Section: Introductionmentioning

confidence: 99%

Comparative electron diffraction study of the diamond nucleation layer on Ir(001)

Gsell

Berner

Brugger

et al. 2008

Diamond and Related Materials

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Comparative electron diffraction study of the diamond nucleation layer on Ir (001) Gsell, S; Berner, S; Brugger, T; Schreck, M; Brescia, R; Fischer, M; Greber, T; Osterwalder, J; Stritzker, BGsell, S; Berner, S; Brugger, T; Schreck, M; Brescia, R; Fischer, M; Greber, T; Osterwalder, J; Stritzker, B (2008 Comparative electron diffraction study of the diamond nucleation layer on Ir(001) AbstractThe carbon layer formed during the bias enhanced nucleation (BEN) procedure on iridium has been studied by different electron diffraction techniques. In reflection high energy electron diffraction (RHEED) and low energy electron diffraction (LEED) the carbon nucleation layer does not give any indication of crystalline diamond even if the presence of domains proves successful nucleation. In contrast, X-ray photoelectron diffraction (XPD) shows a clear C 1s pattern when domains are present after BEN. The anisotropy in the Ir XPD patterns is reduced after BEN while the fine structure is essentially identical compared to a single crystal Ir film. The change in the Ir XPD patterns after BEN can be explained by the carbon layer on top of a crystallographically unmodified Ir film. The loss and change in the fine structure of the C 1s patterns as compared to a single crystal diamond film are discussed in terms of mosaicity and a defective structure of the ordered fraction within the carbon layer.The present results suggest that the real structure of the BEN layer is more complex than a pure composition of small but perfect diamond crystallites embedded in an amorphous matrix. The carbon layer formed during the bias enhanced nucleation (BEN) procedure on iridium has been studied by different electron diffraction techniques. In reflection high energy electron diffraction (RHEED) and low energy electron diffraction terms of mosaicity and a defective structure of the ordered fraction within the carbon layer. The present results suggest that the real structure of the BEN layer is more complex than a pure composition of small but perfect diamond crystallites embedded in an amorphous matrix.

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Domain formation in diamond nucleation on iridium

Cited by 51 publications

References 19 publications

Combined AFM–SEM study of the diamond nucleation layer on Ir(001)

Combined AFM–SEM study of the diamond nucleation layer on Ir(001)

Effects of the bias enhanced nucleation hot-filament chemical-vapor deposition parameters on diamond nucleation on iridium

Comparative electron diffraction study of the diamond nucleation layer on Ir(001)

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