2015
DOI: 10.1109/jetcas.2015.2398232
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Domain Wall Magnets for Embedded Memory and Hardware Security

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Cited by 20 publications
(7 citation statements)
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“…In [156,166], the authors advocate the process variations for nanowire manufacturing in domain-wall memories for PUFs. In [167], the authors leverage the inherently stochastic spin switching mechanism in nanomagnets for TRNGs.…”
Section: Emerging Devicesmentioning
confidence: 99%
“…In [156,166], the authors advocate the process variations for nanowire manufacturing in domain-wall memories for PUFs. In [167], the authors leverage the inherently stochastic spin switching mechanism in nanomagnets for TRNGs.…”
Section: Emerging Devicesmentioning
confidence: 99%
“…Traditional CMOS-based camouflaging implementations incur overheads in circuit area, power, and delay. Recent explorations have investigated emerging devices such as spin-transfer-torque devices 11 , tunnel-FETs 12 , ferroelectric devices 13 , 14 , tungsten diselenide (WSe 2 ) devices 15 , etc., for provisioning hardware security by leveraging unique properties such as their non-volatile behavior. Rajendran et al 16 proposed a gate camouflaging technique by inserting dummy via/contacts in the layout and creating look-alike layouts for NAND, NOR, and XNOR cells (Fig.…”
Section: Introductionmentioning
confidence: 99%
“…Several studies on hardware-oriented security applications have demonstrated the robustness of functional systems based on nano-electronic technology and their preliminary security capabilities, i.e. memristors [5]- [7], spin-torque devices [8], [9], phase change materials [10], [11], silicon nanowires [12], [13], and etc.. The memristor, as one promising candidate among nano-electronic devices, have the potential to construct innovative computing systems with nanoscale miniaturization [14], [15] and lowpower consumption [16].…”
Section: Introductionmentioning
confidence: 99%