1991
DOI: 10.1002/pssa.2211230111
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Doping Effects on Mechanical Properties and Microhardness of Cu2−xSe

Abstract: Effects of alloying in copper selenide Cu2−xSe with electrically active additions M (where M = In, Sb, In + Sb, Zn, Sn, Zr, Si, Er, Dy, Nd, Al, Cd) are studied in the temperature range of 300 to 430 K which includes the superionic transition temperature (Tc = 413 K for Cu1.998Se) by measuring the modulus of rupture σB, the yeild point σ0.2, the fracture stress ϵB, Young's modulus E, and the microhardness Hμ. It is shown that the doping results in an enhancement of σB, σ0.2, and Hμ and the disappearance of supe… Show more

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Cited by 30 publications
(26 citation statements)
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“…For stoichiometric Cu 2 Se the phase transition temperature to the cubic superionic ␣-phase is 414 K, but the transition temperature depends on the composition and decreases with increasing ı [1]. Over the concentration range of ı = 0.15-0.25 the superionic ␣-phase exists at room temperature.…”
Section: Introductionmentioning
confidence: 95%
“…For stoichiometric Cu 2 Se the phase transition temperature to the cubic superionic ␣-phase is 414 K, but the transition temperature depends on the composition and decreases with increasing ı [1]. Over the concentration range of ı = 0.15-0.25 the superionic ␣-phase exists at room temperature.…”
Section: Introductionmentioning
confidence: 95%
“…It has a lot of potential application in the fabrication of photovoltaic devices such window material, super-ionic conductor, electro-optical devices, optical filter, solar cell, thermo electric converter, etc. [1][2][3][4][5][6][7][8][9]. The synthesis of this material in thin film form has been described by using different deposition method such as chemical bath deposition (CBD) selenisation, flash evaporation, vacuum evaporation, spray method, etc.…”
Section: Introductionmentioning
confidence: 99%
“…The selenides semiconductors have important applications e.g. thermoelectric cooling materials, laser materials, optical filters and sensors, superionic materials, optical recording materials, and solar cells [11][12][13][14][15]. PbSe is known to be a narrow band gap semiconductor (Eg = 0.27 V at 300 K [16]).…”
Section: Introductionmentioning
confidence: 99%