Doping induced performance enhancement in inverted small molecule organic photodiodes operating below 1V reverse bias - Towards compatibility with CMOS for imaging applications

Shekhar, Himanshu; Lami, Vincent; Solomeshch, Olga; Fenigstein, A.; Leitner, T.; Lavi, Becky; Vaynzof, Yana; Tessler, Nir

doi:10.1016/j.orgel.2019.01.002

Cited by 9 publications

(12 citation statements)

References 40 publications

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“…After 100 nm W sputtering on the Si/SiO 2 /Al substrate, the surface roughness remained the same as that of Al, while after 100 nm TiN sputtering on the Si/SiO 2 /Al substrate, the surface roughness became ∼2.31 nm. Although the roughness increases after TiN deposition, the root mean square roughness is still much smaller than the previously reported value of ∼5.8 nm from the literature …”

Section: Resultscontrasting

confidence: 78%

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Organic Photodiode Integration on Si Substrates beyond 1000 nm Wavelength

Lai¹,

Hsieh²,

Wu³

et al. 2021

ACS Appl. Electron. Mater.

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Organic photodiode integration on the Si readout circuit offers a solution for extending the sensitivity beyond 1000 nm. In this work, we report the way to integrate organic photodiodes on Si substrates with metals that are complementary metal–oxide–semiconductor process-compatible as bottom electrodes, such as titanium nitride (TiN), tungsten (W), and aluminum (Al). We report on a high-efficiency near-infrared sensor enabled by employing TiN and W as bottom electrodes, with an external quantum efficiency of ∼50% at 940 nm and ∼70% at 1030 nm, a dark leakage current density of 15 nA/cm2, a bandwidth of 15 kHz at −4 V, and a dynamic range of ∼100 dB. Low resistivity and inert properties of TiN make it form a good interface with the organic active layer, leading to an ideal bottom-contact metal for the organic photodiode when integrated on the Si substrate.

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Section: Resultscontrasting

confidence: 78%

“…The surface roughness of the bottom electrode is detrimental to the organic photoactive layer . The rough surface brings a possibility to introduce a leakage current by forming a shunt path between the top and bottom electrodes . The surface topographies of the bottom electrode surfaces were examined by atomic force microscopy (AFM).…”

Section: Resultsmentioning

confidence: 99%

Organic Photodiode Integration on Si Substrates beyond 1000 nm Wavelength

Lai¹,

Hsieh²,

Wu³

et al. 2021

ACS Appl. Electron. Mater.

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“…To avoid ambiguity in the interpretation of the physical picture we employ a planar heterojunction (PHJ) structure [37][38][39] and use two well studied materials, C 70 and 1,1-bis [(di-4-tolylamino) phenyl] cyclohexane (TAPC). [40][41][42][43] In our case, another advantage of using a planar heterojunction is that it has been shown that the open circuit voltage of such cells is not limited by the electrode contact-barriers. 39 We experimentally show that doping directly at the junction has a negative effect but distancing the dopants away from the junction has a positive impact on device performance.…”

Section: Introductionmentioning

confidence: 90%

15% enhancement of the photocurrent at the maximum power point of a thin film solar cell

Shekhar

Tessler

2020

Sustainable Energy Fuels

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“…Tessler and co-authors reported the dependence of the reverse bias dark current of an acceptor C 70 -based PHJ diode on different donor molecules with a 70 nm solution deposited thick film of CuSCN as the EBL [30]. An inverted small molecule organic photodiode with the structure TiN/CuSCN (80 nm)/TAPC (50 nm)/C 70 (50 nm)/BCP (8 nm)/Mg (30 nm)/Ag (70 nm) was further fabricated by his group [159].…”

Section: Inorganic Saltmentioning

confidence: 99%

Carrier Blocking Layer Materials and Application in Organic Photodetectors

Zhang

2021

Nanomaterials

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As a promising candidate for next-generation photodetectors, organic photodetectors (OPDs) have gained increasing interest as they offer cost-effective fabrication methods using solution processes and a tunable spectral response range, making them particularly attractive for large area image sensors on lightweight flexible substrates. Carrier blocking layers engineering is very important to the high performance of OPDs that can select a certain charge carriers (holes or electrons) to be collected and suppress another carrier. Carrier blocking layers of OPDs play a critical role in reducing dark current, boosting their efficiency and long-time stability. This Review summarizes various materials for carrier blocking layers and some of the latest progress in OPDs. This provides the reader with guidelines to improve the OPD performance via carrier blocking layers engineering.

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Doping induced performance enhancement in inverted small molecule organic photodiodes operating below 1V reverse bias - Towards compatibility with CMOS for imaging applications

Cited by 9 publications

References 40 publications

Organic Photodiode Integration on Si Substrates beyond 1000 nm Wavelength

Organic Photodiode Integration on Si Substrates beyond 1000 nm Wavelength

15% enhancement of the photocurrent at the maximum power point of a thin film solar cell

Carrier Blocking Layer Materials and Application in Organic Photodetectors

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