Doping of Sn transition metal in CuSe2 thin films and its effect on structural evolvement and opto-electrical properties

Helan, P. Prathiba Jeya; Mohanraj, K.; Sivakumar, G.

doi:10.1007/s00339-016-0249-7

Cited by 9 publications

(2 citation statements)

References 19 publications

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“…On doping CuSe with cobalt ion, the resistivity of the films was found to increase to 31.96 × 10 −4 (Ω 𝑐𝑚) while the electrical conductivity decreased to 3.13 × 10 2 (𝑆/𝑐𝑚) as doping concentration increases. Helan et al [59] obtained similar increase in electrical resistivity when copper selenide was doped with different concentration of tin ion. Figure 14 showed the graph of electrical resistivity and conductivity against percentage cobalt ions.…”

Section: Electrical Propertiesmentioning

confidence: 74%

Investigation of Optical, Structural, Morphological and Electrical Properties of Electrodeposited Cobalt Doped Copper Selenide (Cu_(1-x) Co_x Se) Thin Films

Okoli¹,

Ezenwaka²,

Okereke³

et al. 2022

Trends Sci

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Undoped and cobalt doped copper selenide thin films have been successfully prepared unto fluorine tin oxide (FTO) substrates by electrodeposition method using copper acetate, cobalt nitrate and selenium (IV) oxide as precursors for copper, cobalt and selenium ions respectively. Deposited thin films were subjected to optical, structural, morphological, compositional and electrical analysis using spectrophotometer, x-ray diffractometer, scanning electron microscope (SEM), energy dispersive x-ray spectroscopy (EDS) and 4-point probe. Optical results observed between the wavelength range of 300 nm and 1,000 nm showed that the films have good optical responses. Absorbance values ranged between 0.1 and 0.81 while transmittance lies between 15.59 and 78.68 %. Energy band gap of the films was found to vary from 2.10 to 2.28 eV. These results showed that cobalt as a dopant could be used to modify properties of copper selenide thin films. Structural analysis showed that the deposited films are polycrystalline in nature with hexagonal structural phase. Crystallite sizes of range 27.56 to 34.27 nm were obtained while dislocation density lied between and . Microstrain ranged between and . Micrograph images showed flake-like particles that increased in size as percentage of cobalt increased. Energy dispersive spectroscope (EDS) results confirmed the incorporation of cobalt on the deposited copper selenide films. Electrical resistivity of the films increased from to while conductivity decreased from to as a result of variation in cobalt ion concentration. These properties of the deposited thin films positioned them for solar cell and optoelectronics device applications. HIGHLIGHTS Energy band gap of electrosynthesized cobalt doped copper selenide ranged from 2.10 to 2.28 eV Film thickness values ranged from 48.41 and 176.79 nm. Thickness values of the films were found to increase as concentration of cobalt increase Increase in dopant concentration resulted to shift in diffraction peaks towards larger angles Increase in crystallite size from 27.56 - 34.27 nm was observed as dopant concentration increases SEM images of the films revealed flake - like particles of different sizes GRAPHICAL ABSTRACT

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Section: Electrical Propertiesmentioning

confidence: 74%

Investigation of Optical, Structural, Morphological and Electrical Properties of Electrodeposited Cobalt Doped Copper Selenide (Cu_(1-x) Co_x Se) Thin Films

Okoli¹,

Ezenwaka²,

Okereke³

et al. 2022

Trends Sci

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“…Furthermore, owing to the slightly larger ionic radius of Ni compared to Cu, a lower-theta shift is observed in the Ni-doped CuSe XRD peaks (dashed line) compared to the CuSe peaks, confirming the effective penetration of Ni into the CuSe lattice structure with larger particle size. The sharper peak in Ni-doped CuSe, in comparison to CuSe, suggests that the presence of Ni contributes to a higher crystalline quality of CuSe due to higher degree of order, crystallization and arrangement by filling the vacancies in the lattice network 33 – 38 . Additionally, the larger ionic radius of Ni, leading to increased spacing between crystal planes during the replacement of Cu with Ni, is another factor contributing to a larger crystalline size after doping 39 – 41 .…”

Section: Resultsmentioning

confidence: 99%

Exploring secondary optical transitions: a study utilizing the DITM method, and enhanced photocatalytic properties in Ni-doped CuSe

Ghobadi,

Zamani Meymian,

Fallah

2024

Sci Rep

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This study explores the simultaneous presence of two metal ions of Nickel (Ni) and Copper (Cu) on the formation of a metal selenide (Ni-doped CuSe) in an alkaline environment. The impact of Ni ions on creating the second optical transitions is investigated. Different concentrations amounts of Ni ions (0.01, 0.02, and 0.03 mol) are utilized to produce Ni-doped CuSe semiconductor thin films through a chemical solution deposition method with deposition times varying from 3 to 6 h. Absorbance spectra are employed to determine the band-gap, while Field Emission Scanning Electron Microscopy is utilized for morphological analysis. Structural and elemental analyses are conducted using X-ray Diffraction and Energy Dispersive X-ray Spectroscopy techniques. Additionally, a relatively innovative approach for determining the optical transitions, termed the Derivation Ineffective Thickness Method (DITM), is employed. DITM eliminates the need for thin film thickness and assumptions about the type of transition (direct or indirect) for band-gap calculation. Moreover, a comparison is made between the band-gap obtained from the Tauc model and the transitions obtained by DITM method. Furthermore, it is demonstrated that the optical transitions exhibit two distinct band-gaps associated with nickel selenide (NiSe) as second transition and copper selenide (CuSe) as fundamental transition. The presence of Ni is also found to enhance crystal quality. The study also briefly explores the improved photocatalytic properties of CuSe in the presence of Ni.

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Solar‐Driven Sulfide Oxidation Paired With CO₂ Reduction Based on Vacancies Engineering of Copper Selenide

Wang,

Zhang,

Wang

et al. 2024

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Photovoltaic‐driven electrochemical (PV‐EC) carbon dioxide reduction (CO2R) coupled with sulfide oxidation (SOR) can efficiently convert the solar energy into chemical energy, expanding its applications. However, developing low‐cost electrocatalysts that exhibit high selectivity and efficiency for both CO2R and SOR remains a challenge. Herein, a bifunctional copper selenide catalyst is developed with copper vacancies (v‐CuSe2) for the CO2R‐SOR. The Faradaic efficiency (FE) of 62.4% for methane at −200 mA cm−2 is achieved in the cathodic CO2R. In a two‐electrode CO2R‐SOR system with 16 h of long‐term operation at a current density of 200 mA cm−2, an average Faradaic efficiency of 57.2% for methane and 97.7% for sulfur powder generation is achieved at cathode and anode, respectively. Compared to the coupling of CO2R with oxygen evolution reaction (OER), the energy efficiency (EE) of the CO2R‐SOR system can be increased to 22.9%. The mechanism study has found that the synergistic effect of copper vacancies and introduced Se significantly enhances the selectivity toward methane. Driven by silicon solar cells, a solar‐to‐methane conversion efficiency of 2% is achieved.

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Doping of Sn transition metal in CuSe2 thin films and its effect on structural evolvement and opto-electrical properties

Cited by 9 publications

References 19 publications

Investigation of Optical, Structural, Morphological and Electrical Properties of Electrodeposited Cobalt Doped Copper Selenide (Cu_(1-x) Co_x Se) Thin Films

Investigation of Optical, Structural, Morphological and Electrical Properties of Electrodeposited Cobalt Doped Copper Selenide (Cu_(1-x) Co_x Se) Thin Films

Exploring secondary optical transitions: a study utilizing the DITM method, and enhanced photocatalytic properties in Ni-doped CuSe

Solar‐Driven Sulfide Oxidation Paired With CO₂ Reduction Based on Vacancies Engineering of Copper Selenide

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Doping of Sn transition metal in CuSe2 thin films and its effect on structural evolvement and opto-electrical properties

Cited by 9 publications

References 19 publications

Investigation of Optical, Structural, Morphological and Electrical Properties of Electrodeposited Cobalt Doped Copper Selenide (Cu_(1-x) Co_x Se) Thin Films

Investigation of Optical, Structural, Morphological and Electrical Properties of Electrodeposited Cobalt Doped Copper Selenide (Cu_(1-x) Co_x Se) Thin Films

Exploring secondary optical transitions: a study utilizing the DITM method, and enhanced photocatalytic properties in Ni-doped CuSe

Solar‐Driven Sulfide Oxidation Paired With CO2 Reduction Based on Vacancies Engineering of Copper Selenide

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Solar‐Driven Sulfide Oxidation Paired With CO₂ Reduction Based on Vacancies Engineering of Copper Selenide