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The present work describes the deposition of semiconducting Cu 2 SnSe 3 thin films by electron beam evaporation method. The structure of the deposited films was characterized by XRD and Raman analysis. X-ray diffraction study revealed that the Cu 2 SnSe 3 thin films had a cubic sphalerite-like structure with crystallite size of 12 nm. Raman spectrum of the thin films confirmed the phase purity. FESEM analysis showed a continuous film with polydispersed grains of a diameter less than 1 µm and the elemental composition was confirmed by EDS spectrum. The UV-Vis spectrum revealed that the sample had high absorption in the visible region and the band gap was found to be 1.15 eV. The I-V graph exhibited the electrical resistivity and conductivity of the film as 2.13 Ω·cm and 0.468 S/cm, respectively. Thus, the electron beam evaporated Cu 2 SnSe 3 thin films showed high purity of structure and good morphological, optical and electrical properties comparable with other methods of thin film deposition.

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