Studies on structural, optical and electrical properties of electron beam evaporated Cu₂SnSe₃ thin films

Abstract

The present work describes the deposition of semiconducting Cu 2 SnSe 3 thin films by electron beam evaporation method. The structure of the deposited films was characterized by XRD and Raman analysis. X-ray diffraction study revealed that the Cu 2 SnSe 3 thin films had a cubic sphalerite-like structure with crystallite size of 12 nm. Raman spectrum of the thin films confirmed the phase purity. FESEM analysis showed a continuous film with polydispersed grains of a diameter less than 1 µm and the elemental composition was confirmed by EDS spectrum. The UV-Vis spectrum revealed that the sample had high absorption in the visible region and the band gap was found to be 1.15 eV. The I-V graph exhibited the electrical resistivity and conductivity of the film as 2.13 Ω·cm and 0.468 S/cm, respectively. Thus, the electron beam evaporated Cu 2 SnSe 3 thin films showed high purity of structure and good morphological, optical and electrical properties comparable with other methods of thin film deposition.

Electrochemical and Photoelectrochemical Characterization of Cu2SnSe3Thin Films Deposited on Mo/Glass Substrates

“…4 (light)). 14,22 Eu 3+ (aq) + e − + hν → Eu 2+ (aq) [1] The photocurrent values obtained (Fig. 4 (insert), or Table II) were higher than those reported in literature, e.g., in Ref.…”

“…9 According to the literature the thin films of ternary copper chalcogenide can be successfully deposited using a variety of different physical and chemical methods. 10,[11][12][13][14][15][16][17][18] Many authors have investigated the physical properties of these semiconductor thin films by using traditional methods. For example, usually the carrier concentration and Hall mobility of the films can be determined by combining the Hall effect and conductivity measurements using the van der Pauw method; the optical transmittance and reflectance is recorded using a UV-vis-NIR spectrophotometer.…”

Study of Copper Tin Selenide Nanoparticles of Milled Powder and Thin Films

“…The value of the electrical resistivity is slightly higher than the value of thermally evaporated thin films (1.01 Ω cm) [22], pulverized thin films (0.12 Ω cm) [41] and nonoink films (0.25 Ω cm) [42]. While it is lower than that of the flash evaporated thin film (16 to 124 Ω cm) [43] and lower than that of electron beam evaporated Cu2SnSe3 thin (2.13 Ω cm) [44].…”