Doping Profile Analysis in Si by Electrochemical Capacitance‐Voltage Measurements

Peiner, Erwin; Schlachetzki, A.; Krüger, D.

doi:10.1149/1.2044101

Cited by 110 publications

(54 citation statements)

References 5 publications

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“…Phosphorus diffusion profiles have been measured by means of Electrochemical Capacitance-Voltage profiling (ECV) using NH 4 F/ HF as electrolyte [20]. Some of the wafers have also been selected for measuring Secondary Ion Mass Spectrometry (SIMS) using positive ions (whose low impact energy will provide a better depth resolution in the first nanometers of the sample) and negative ions (which provide a better resolution deeper into the sample).…”

Section: Methodsmentioning

confidence: 99%

Understanding phosphorus diffusion into silicon in a MOVPE environment for III–V on silicon solar cells

García‐Tabarés¹,

Martín²,

García³

et al. 2013

Solar Energy Materials and Solar Cells

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Dual-junction solar cells formed by a GaAsP or GalnP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. When manufacturing a multi-junction solar cell on silicon, one of the first processes to be addressed is the development of the bottom subcell and, in particular, the formation of its emitter.In this study, we analyze, both experimentally and by simulations, the formation of the emitter as a result of phosphorus diffusion that takes place during the first stages of the epitaxial growth of the solar cell. Different conditions for the Metal-Organic Vapor Phase Epitaxy (MOVPE) process have been evaluated to understand the impact of each parameter, namely, temperature, phosphine partial pressure, time exposure and memory effects in the final diffusion profiles obtained. A model based on SSupremlV process simulator has been developed and validated against experimental profiles measured by ECV and SIMS to calculate P diffusion profiles in silicon formed in a MOVPE environment taking in consideration all these factors.

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Section: Methodsmentioning

confidence: 99%

Understanding phosphorus diffusion into silicon in a MOVPE environment for III–V on silicon solar cells

García‐Tabarés¹,

Martín²,

García³

et al. 2013

Solar Energy Materials and Solar Cells

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show abstract

“…case. This was measured using the electrochemical capacitance voltage (ECV) technique (WEP-CVP21) [18]. These films were fabricated with 20/20 silane/diborane sccm ratio and as such a high peak doping conc.…”

Section: Dark IV Measurementsmentioning

confidence: 99%

Junction Formation With HWCVD and TCAD Model of an Epitaxial Back-Contact Solar Cell

Rahman

Nawabjan

Tarazona³

et al. 2016

IEEE J. Photovoltaics

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Abstract-In this work we present morphological and electrical characteristics of a junction formed of Si P-type films deposited on an N-type silicon wafer using a hot wire chemical vapour deposition tool. We describe the fabrication process, and study the influence of diborane flow and post-process annealing in improving junction characteristics. Our morphological studies undertaken using atomic force microscopy show that the initial deposition suffered from voids rather than being a uniform film, however this improves significantly under our annealing treatment. The improvement in morphology was observed in the electrical characteristics, with estimated Voc doubling and rectification of the junction improving by several orders of magnitude. Fitting of the current-voltage curves to a two diode model, showed that increasing the diborane flow in the process helps reduce the saturation current and ideality factors, whilst increasing the shunt resistance. ECV and QSSPC measurements are used to characterise the deposited films further. A solar cell device with a silicon epitaxy emitter is modelled using industry standard 3D modelling tools and input parameters from experimental data, and the impact of defects is studied. A potential efficiency approaching 25% is shown to be feasible for an optimised device.

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“…The electrochemical capacitance-voltage (ECV) [1,2] method is commonly used in profiling the surface doping concentration of silicon solar cells [3,4] due to its reasonable cost of the measurement equipment and the increasing reliability achieved by the effort of the equipment suppliers. While secondary ion mass spectroscopy (SIMS) has difficulty in characterizing textured wafers, ECV can practically measure them by assuming the area factor ([surface area] / [projected area]) is known.…”

Section: Introductionmentioning

confidence: 99%

Calibration of Electrochemical Capacitance-voltage Method on Pyramid Texture Surface Using Scanning Electron Microscopy

et al. 2013

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The electrochemical capacitance-voltage (ECV) technique can practically profile carrier concentrations on textured surfaces, but reliable calibration of the surface area is strongly demanded since it plays a decisive role in calculating both the carrier concentration and the profiling depth. In this work, we calibrate the area factor of pyramidally textured surfaces by comparing ECV profiles with cross-sectional scanning electron microscopy image, and found out it is 1.66, and not 1.73 which was formerly assumed. Furthermore, the calibrated area factor was applied to POCl 3 and BBr 3 diffusions which resulted in comparable diffusion profiles for both textured and polished surfaces.

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Doping Profile Analysis in Si by Electrochemical Capacitance‐Voltage Measurements

Cited by 110 publications

References 5 publications

Understanding phosphorus diffusion into silicon in a MOVPE environment for III–V on silicon solar cells

Understanding phosphorus diffusion into silicon in a MOVPE environment for III–V on silicon solar cells

Junction Formation With HWCVD and TCAD Model of an Epitaxial Back-Contact Solar Cell

Calibration of Electrochemical Capacitance-voltage Method on Pyramid Texture Surface Using Scanning Electron Microscopy

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