Doping Profiles and Nanostructural Properties of Molecular-Beam-Deposited GZO Thin Films on Glass Substrates

Muranaka, Tsutomu; Uehara, T.; Sakano, Tatsunori; Nabetani, Yoichi; Akitsu, Takashiro; Kato, Takeru; Matsumoto, Takashi; Hagihara, Shigeru; Abe, Osamu; Hiraki, Satoshi; Fujikawa, Y.

doi:10.3938/jkps.53.2897

Cited by 3 publications

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“…As the dopant atoms possess different ionic radii to that of Zn, their substitution into Zn sites (or interstitial sites) will likely cause strain within the lattice. The loss in XRD peak intensity due to disorder upon doping, which usually coincides with a reduction in electrical conductivity, is a commonly observed phenomenon in thin film semiconductors .…”

Section: Resultsmentioning

confidence: 99%

Al‐, Ga‐, and In‐doped ZnO thin films via aerosol assisted CVD for use as transparent conducting oxides

Potter

Bhachu

Powell

et al. 2016

Physica Status Solidi (a)

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Al‐, Ga‐, and In‐doped ZnO thin films were deposited on glass substrates by aerosol assisted chemical vapour deposition (AACVD) at a deposition temperature of 450 °C. The air‐stable compound zinc acetylacetonate [Zn(acac)2] was used as a Zn source, whilst for the dopants of Al, Ga and In, the corresponding trichloride was used. Methanol solutions of the metal salts were used as precursor solutions and N2 carrier gas was used for the aerosol. Films were grown in approximately 30 min and were synthesised using dopant values of 5, 10, 15 and 20 mol.% (with respect to the Zn) in the precursor solution. XRD analysis showed that the films were wurtzite ZnO. XPS analysis confirmed the presence of the dopants in the films. Several of the films showed high transparency (>80%) in the visible range, and low resistivity (∼10−3 Ω cm).

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Section: Resultsmentioning

confidence: 99%

Al‐, Ga‐, and In‐doped ZnO thin films via aerosol assisted CVD for use as transparent conducting oxides

Potter

Bhachu

Powell

et al. 2016

Physica Status Solidi (a)

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show abstract

“…We have observed grain distribution along the growth direction, that is, 20-30 nm at the bottom layer and 20-80 nm at the top layer, and high-angle tilt grain boundaries for highly Ga-doped films. 11) Therefore, we have to be careful about estimating the grain size from the FWHM of the XRD peak. In-plane grain size is important for the transport properties of a TCF.…”

Section: Resultsmentioning

confidence: 99%

Effects of Ga Doping and Substrate Temperature on Electrical Properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition

Matsumoto¹,

Mizuguchi²,

Horii³

et al. 2011

Jpn. J. Appl. Phys.

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Transparent conducting ZnO films are deposited by plasma-assisted deposition on glass and plastic substrates at temperatures as low as 50 °C. The effects of Ga doping and growth temperature on electrical properties are studied using Hall measurement and X-ray diffraction. Carrier density increases with Ga doping for both 50 and 300 °C growth. For low-temperature growth, the carrier mobility in undoped ZnO films is the same as that in high-temperature-grown films, but it becomes lower as the Ga doping level becomes higher. Lattice expansion in both c and a axes directions is observed for low-temperature-grown highly Ga-doped films. The relation between the mobility reduction and the lattice expansion is discussed.

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Effects of Ga Doping and Substrate Temperature on Electrical Properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition

Matsumoto¹,

Mizuguchi²,

Horii³

et al. 2011

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Doping Profiles and Nanostructural Properties of Molecular-Beam-Deposited GZO Thin Films on Glass Substrates

Cited by 3 publications

References 0 publications

Al‐, Ga‐, and In‐doped ZnO thin films via aerosol assisted CVD for use as transparent conducting oxides

Al‐, Ga‐, and In‐doped ZnO thin films via aerosol assisted CVD for use as transparent conducting oxides

Effects of Ga Doping and Substrate Temperature on Electrical Properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition

Effects of Ga Doping and Substrate Temperature on Electrical Properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition

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