Doping-Type Dependence of Damage in Silicon Diodes Exposed to X-Ray, Proton, and He$^{+}$ Irradiations

Abstract

Different amounts of degradation for n-Si and p-Si are observed after X-ray, H + , and He + irradiations. Recombination lifetime and forward I-V measurements made on abrupt-junction diodes are compared to theory. Ionizing damage and displacement damage associated with surface and bulk trapping mechanisms, respectively, compete with each other and lead to different behaviors according to the doping type of the silicon on the lightly doped side of the junction. Surface effects are dominant in the n + /p diodes compared to the p + /n diodes; bulk trapping prevails in the n-Si compared to p-Si. Independently of ion type or fluence, the lifetime damage factor due to irradiation is worse in the p-Si than in the n-Si by a factor of 2-3 times.

Improved p–n heterojunction device performance induced by irradiation in amorphous boron carbide films

“…One aliquot fluence above (i.e. 6.5x10 16 ions/cm 2 ) was calculated to result in 0.1 displacements per atom (dpa) in the (a-B 10 C 2+x :H y ) films studied, as determined from the SRIM calculated damage events (full cascade mode) and assuming a film atomic density of 5.0x10 22 atoms/cm 3 . The He + ion irradiated fluence to dose (dpa) relationship is linear: 2 times the above fluence yields 0.2 dpa in dose, 5 times the above fluence yields 0.5 dpa in dose, etc.…”

“…Traditional p-n junction diodes experience immediate device degradation [21][22][23] in such environments.…”

X-Ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices

“…4-3(a). To understand the increase in the current in Because the non-ionizing energy loss of 1.8-MeV protons is much higher than that of the higher-energy protons that typically result in the degradation in space systems [41], [42], the equivalent displacement damage doses in this study are quite high compared with most realistic space environments [36]. Thus, these types of BD-PUFs may well exhibit excellent radiation tolerance in most space environments of interest.…”

“…The beam size was sufficient to irradiate the entire die uniformly. The TID levels for proton fluences of 3 x 10 13 , 5 x 10 13 , 7 x 10 13 and 1 x 10 14 cm -2 are 58, 96, 134 and 192 Mrad(Si), respectively [36]. The irradiation is performed at room temperature.…”

Open-Circuit Voltage Decay Simulations on Silicon and Gallium Arsenide p-n Homojunctions: Design Influences on Bulk Lifetime Extraction

“…Initially, a forward current source was employed as excitation and hereafter optical excitation has been also investigated [14]. Two main circuits can be used: one where switch and characterized diodes are in series [6,15,16,17] (voltage bias source) and the other where they are in parallel [18,19] (current bias source). Usually, OCVD signal presents 3 regions as shown in Fig.…”