Different amounts of degradation for n-Si and p-Si are observed after X-ray, H + , and He + irradiations. Recombination lifetime and forward I-V measurements made on abrupt-junction diodes are compared to theory. Ionizing damage and displacement damage associated with surface and bulk trapping mechanisms, respectively, compete with each other and lead to different behaviors according to the doping type of the silicon on the lightly doped side of the junction. Surface effects are dominant in the n + /p diodes compared to the p + /n diodes; bulk trapping prevails in the n-Si compared to p-Si. Independently of ion type or fluence, the lifetime damage factor due to irradiation is worse in the p-Si than in the n-Si by a factor of 2-3 times.
Results are shown obtained in the optimization of an automatic flow injection system that combines microwave digestion with atomic spectrometric detection (FAAS, ICP/AES) for the determination of heavy metals in sewage sludge. Digestion is performed by preparing a suspension of the sample in 1.5 mol/l HNO(3) and making it flow through a PTFE capillary tube placed inside a conventional microwave oven. The effects of the length and inner diameter of the capillary tube, as well as that of the pumping rate, have been studied in order to find the experimental conditions that allow a quantitative elemental recovery in the shortest period of time possible. The optimization study was carried out on a certified sample (BCR No. 146), and the elements determined were Zn, Cu, Pb, Cd, Ni and Cr. The experimental data (percent recovery vs. digestion time) have been fitted to a mathematical model in order to quantify the influence of each of the variables studied. The optimized procedure (MW-ICP/AES) has been applied to one ordinary and one certified sewage sludge sample. In comparison with the conventional methods of sewage sludge analysis, the one proposed is less time consuming, while being equally precise and accurate.
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