Abstract:To investigate the structural changes in the SiO2 (silicon dioxide) layer, which is the sensitive region of the RadFET radiation sensors used in the medical field, and to elaborate the impacts of these modifications on electrical characteristics. Methods: Dry oxidation method was used to grow the SiO2 film on n-type Si (100) and SiO2 MOS capacitors were produced by using DC magnetron sputtering. Irradiation was carried out using a 60 Co radioactive source at a dose range of 1 kGy-50 kGy. XRD (X-ray diffraction… Show more
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