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Electrical parameters of Erbium Oxide (Er2O3) MOS capacitors depending on frequency were investigated deeply, in this paper. Er2O3 layers were deposited on p-Si substrates with (100) oriented using RFmagnetron sputtering method. The films were annealed at 500 o C in N2 environment. C-V characteristic changes reduce with increasing frequency. G/ω-V characteristic variations show different behavior between 10-250 kHz and 250 kHz-1 MHz. It is thought that these different behaviors are caused by interface states between silicon and Er2O3 layer, series resistance (Rs) effects and the relaxation time of trapped states. The Rs values calculated by the Cma and Gma values at the high frequency and decrease with rising frequency. Then, Cc-V and Gc/ω-V characteristic curves were measured and compared to first measurements. In addition, interface state density (Dit), diffusion potential (VD), and barrier height (ΦB) were calculated and these results demonstrate similar behaviors.

To investigate the structural changes in the SiO2 (silicon dioxide) layer, which is the sensitive region of the RadFET radiation sensors used in the medical field, and to elaborate the impacts of these modifications on electrical characteristics. Methods: Dry oxidation method was used to grow the SiO2 film on n-type Si (100) and SiO2 MOS capacitors were produced by using DC magnetron sputtering. Irradiation was carried out using a 60 Co radioactive source at a dose range of 1 kGy-50 kGy. XRD (X-ray diffraction) results showed that no crystalline structure was formed in the studied dose range. Results: The results obtained from XPS (X-ray photoelectron spectroscopy) showed that Si-Si oxygen deficient bonds were formed in the post-production structure, resulting in the observation of flat band voltage (𝑉 𝑓𝑏 ) at negative values. Conclusions: In general, the Si-Si oxygen deficient bond content increased with increasing radiation dose, causing the C-V curve to shift towards larger negative voltage values as desired. The device sensitivity was almost constant after 25 kGy.

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