Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies

Abstract

Electrical parameters of Erbium Oxide (Er2O3) MOS capacitors depending on frequency were investigated deeply, in this paper. Er2O3 layers were deposited on p-Si substrates with (100) oriented using RFmagnetron sputtering method. The films were annealed at 500 o C in N2 environment. C-V characteristic changes reduce with increasing frequency. G/ω-V characteristic variations show different behavior between 10-250 kHz and 250 kHz-1 MHz. It is thought that these different behaviors are caused by interface states between silicon and Er2O3 layer, series resistance (Rs) effects and the relaxation time of trapped states. The Rs values calculated by the Cma and Gma values at the high frequency and decrease with rising frequency. Then, Cc-V and Gc/ω-V characteristic curves were measured and compared to first measurements. In addition, interface state density (Dit), diffusion potential (VD), and barrier height (ΦB) were calculated and these results demonstrate similar behaviors.

Dose responses of the SiO2 used in radiation sensors in field effect transistor form

“…Therefore, the series resistance correction, which is explained in detail in the Ref. [14], is applied to the data. The corrected C-V characteristics for 100 kHz and 1 MHz of the SiO2 MOS capacitor taken between -25 V -15 V before and after irradiation were given in Figure 5.…”