Double-heterojunction photodetector for midinfrared applications: theoretical model and experimental results

Chakrabarti, P.; Krier, A.; Morgan, A. F.

doi:10.1117/1.1595668

Cited by 5 publications

(2 citation statements)

References 24 publications

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“…However, room temperature detection is of great interest since it avoids the use of any cooler which is expensive, bulky, power consuming, and needs time to be turned on. InAsSb alloys have been proposed for uncooled thermal imaging [6][7][8] in this spectral range: InAs 0.91 Sb 0.09 has a room temperature cutoff of 5 µm when lattice matched on GaSb. The main challenge of this material is to see if it can reach the ultimate performances of infrared detector materials [9][10][11].…”

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confidence: 99%

Generation–recombination reduction in InAsSb photodiodes

Carras

Renard

Marcadet

et al. 2006

Semicond. Sci. Technol.

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Generation-recombination processes in a narrow band gap active region of infrared photodiodes are studied theoretically and experimentally. Thanks to an analysis of the transport in InAsSb photodiodes as a function of temperature, we demonstrate that these processes can be reduced by controlling the doping of the active region. The first Auger-dominated detector in this spectral range is shown, with negligible diffusion and SRH generation-recombination processes. This leads to the highest detectivity ever reported for a high-temperature antimonide-based detector in this spectral range: D * = 2.5 × 10 10 cm Hz 1/2 W −1 at 250 K and 1.3 × 10 11 cm Hz 1/2 W −1 at 180 K and λ = 3.39 µm.

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confidence: 99%

Generation–recombination reduction in InAsSb photodiodes

Carras

Renard

Marcadet

et al. 2006

Semicond. Sci. Technol.

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“…In the IR field, such knowledge can help to find the optimal design of the bulk as well as superlattice IR detectors. Currently, in the InAsSb material, such parameters are obtained either from the fitting procedure [9] or presumed in advance [10].…”

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confidence: 99%

Trap parameters in the infrared InAsSb absorber found by capacitance and noise measurements

Ciura

Kolek

Gomółka

et al. 2019

Semicond. Sci. Technol.

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We reported experimentally determined trap parameters for the narrow-gap InAs 1−x Sb x material with the ternary composition x=0.18. The deep level transient spectroscopy supported by the low frequency noise spectroscopy were used to study traps in the mid-wavelength infrared (IR) photodetector with the InAs 1−x Sb x absorber. The trap levels within the bandgap, theirs capture cross-sections and trap concentration were found. Experimentally obtained parameters are consistent with calculated values reported in the literature. The trap levels E t =140-145 meV and E t =45 meV, with respect to the valence band edge, are the most important for IR detectors because levels seem to be pinned to the valence band edge. It means that they are insensitive to composition x of the InAs 1−x Sb x alloy. Consequently, for bulk detectors, each level can lie around the middle of the bandgap and can become an efficient generation-recombination center which degrades the minority carrier lifetime in the mid-wavelength (trap level 140-145 meV) or long-wavelength (trap level 45 meV) IR devices based on the InAs 1−x Sb x material. The levels can be also important for the emerging IR material, i.e. superlattice InAs/InAs 1−x Sb x , where the midgap states can be also introduced by traps located in the InAs 1−x Sb x ternary alloy.

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