Double in-plane-gate IZO-based thin-film transistors with pea protein gate dielectrics

Abstract

Double in-plane-gate indium-zinc-oxide (IZO) thin-film transistors (TFTs) using pea protein as the gate dielectric films were fabricated on ITO glass substrates at room temperature. Pea protein, a natural biodegradable solid electrolyte, showed a very high specific gate capacitance of 2.0 μF cm −2 at 1.0 Hz due to the electric-double-layer effect. The field effect mobility, current ON/OFF ratio, and subthreshold swing of the IZO-based TFTs with bottom gate were estimated to be 27.6 cm 2 V −1 s −1 , 3 × 10 6 , and 167 mV/decade, respectively. Then, a resistor-loaded inverter with a high voltage gain of 18 was investigated. At last, 'NAND' logic operation was demonstrated with two in-plane gates as the input terminals. Such double in-plane-gate IZO-based TFTs with pea protein gate dielectrics have potential applications in low-cost electronics.

Poly (vinyl alcohol)/graphene oxide hybrid electrolyte gated oxide neuron transistors for multifunctional logic applications

“…Especially due to the relatively low capacity of portable battery, logic circuits with low power consumptions are extremely desirable. As indicated previously, electrolyte gated oxide transistors provide promising strategies for decreasing power consumption, as is meaningful for logic circuits with low-power consumption [22][23][24]. Herein, low-voltage PVA/GO hybrid electrolyte gated ITO based oxide neuron transistors were fabricated.…”

W-doped In2O3 nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity

“…[10][11][12][13] Indium oxide (In 2 O 3 ) is a wide bandgap (3.75 eV) semiconductor material with high electron mobility (theoretical value ∼ 270 cm 2 •V −1 •s −1 ) and high transparency, and it has been widely used in semiconductor optoelectronic devices. [14][15][16] Recently, efforts have been made to improve its properties by doping elements such as Sn, [17] Mo, [18] Ga, [19] Zn, [20] and so on. Among them, W-doped In 2 O 3 (IWO) have recently gained interest following the experimental demonstration of IWO field effect transistors with ultra-high on/off current ratio.…”

Printed in-plane electrolyte-gated transistor based on zinc oxide

“…Their results indicated that the area of the gate electrode scales with the channel current [21]. IPGTs are generally based on metal oxides semiconductors or heterostructures of gallium or indium, manufactured using photolithography and vacuum deposition techniques, as radiofrequency magnetron sputtering [15,16,[20][21][22][23][24][25].…”