Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry

Tracy, Lisa A; Nordberg, Eric P; Young, Ralph W.; Pinilla, Carlos Borrás; Stalford, Harold; Eyck, Gregory A. Ten; Eng, Kevin; Childs, Kenton D.; Wendt, Joel R.; Grubbs, Robert K.; Stevens, Jeffrey; Lilly, Michael; Eriksson, M. A.; Carroll, Malcolm S.

doi:10.1063/1.3518058

Cited by 23 publications

(12 citation statements)

References 18 publications

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“…Metal-oxide-semiconductor devices inspired by classical transistors have proven to be highly suitable for the realization of quantum bits both in intrinsic silicon and silicon-germanium heterostructures 3,5 . Their very flexible design has enabled single and double quantum dots [6][7][8][9] , spin read-out via Pauli spin blockade [10][11][12][13][14][15] , charge sensing experiments with a quantum point contact 16 and dispersive read-out 17 , single qubits 10,[18][19][20][21] and two-qubit logic gates 22 in quick succession. With the demonstration of these building blocks, the reproducible fabrication of fully gate-tuneable devices receives increased attention 23,24 .…”

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confidence: 99%

“…The device design reported there has been the workhorse for the impressive follow-up experiments performed at the University of New South Wales 18,22,[29][30][31][32][33][34] , and was also successfully implemented by other research groups 26,[35][36][37][38][39][40] . Besides aluminium, also poly silicon has been employed as a gate material 9,41 . Noble metals, like palladium 7 , were so far only used for depletion-type quantum dots that do not require multi-layer gate stacks.…”

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confidence: 99%

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Palladium gates for reproducible quantum dots in silicon

Brauns

Amitonov

Spruijtenburg

et al. 2018

Sci Rep

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We replace the established aluminium gates for the formation of quantum dots in silicon with gates made from palladium. We study the morphology of both aluminium and palladium gates with transmission electron microscopy. The native aluminium oxide is found to be formed all around the aluminium gates, which could lead to the formation of unintentional dots. Therefore, we report on a novel fabrication route that replaces aluminium and its native oxide by palladium with atomic-layer-deposition-grown aluminium oxide. Using this approach, we show the formation of low-disorder gate-defined quantum dots, which are reproducibly fabricated. Furthermore, palladium enables us to further shrink the gate design, allowing us to perform electron transport measurements in the few-electron regime in devices comprising only two gate layers, a major technological advancement. It remains to be seen, whether the introduction of palladium gates can improve the excellent results on electron and nuclear spin qubits defined with an aluminium gate stack.

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confidence: 99%

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confidence: 99%

Palladium gates for reproducible quantum dots in silicon

Brauns

Amitonov

Spruijtenburg

et al. 2018

Sci Rep

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“…Experiment Figure 1 shows the 3D CAD drawing of a lateral DQD structure 24,25 , showing the depletion gates and silicon substrate. The depletion gates' electrodes are made of highly n-doped polysilicon and rest on a 35-nm SiO 2 layer.…”

Section: Introductionmentioning

confidence: 99%

Efficient self-consistent quantum transport simulator for quantum devices

Gao¹,

Mamaluy²,

Nielsen³

et al. 2014

Journal of Applied Physics

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We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulation of 1D quantum devices. Applying the general CBR approach to 1D open systems results in a set of very simple equations that are derived and given in detail for the first time. The charge self-consistency of the coupled CBR-Poisson equations is achieved by using the predictor-corrector iteration scheme with the optional Anderson acceleration. In addition, we introduce a new way to convert an equilibrium electrostatic barrier potential calculated from an external simulator to an effective doping profile, which is then used by the CBR-Poisson code for transport simulation of the barrier under non-zero biases. The code has been applied to simulate the quantum transport in a double barrier structure and across a tunnel barrier in a silicon double quantum dot. Extremely fast self-consistent 1D simulations of the differential conductance across a tunnel barrier in the quantum dot show better qualitative agreement with experiment than non-self-consistent simulations.

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“…16 As a result, Si spin QC has emerged as an active subfield of modern condensed matter physics. Outstanding experimental progress in Si spin QC has been reported in the last few years in Si quantum dots (QDs), [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] and in donor-based architectures. [36][37][38][39][40][41][42][43][44][45][46][47][48] Theoretical research on Si QDs has also evolved at a brisk pace.…”

Section: Introductionmentioning

confidence: 99%

Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling

Culcer

2012

Phys. Rev. B

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A gate electric field has a small but non-negligible effect on the phase of the valley-orbit coupling in Si quantum dots. Finite interdot tunneling between valley eigenstates in a double quantum dot is enabled by a small difference in the phase of the valley-orbit coupling between the two dots, and it in turn allows controllable rotations of two-dot valley eigenstates at a level anticrossing. We present a comprehensive analytical discussion of this process, with estimates for realistic structures.

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Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry

Cited by 23 publications

References 18 publications

Palladium gates for reproducible quantum dots in silicon

Palladium gates for reproducible quantum dots in silicon

Efficient self-consistent quantum transport simulator for quantum devices

Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling

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