“…For the two first points, we have recently evidenced that this is the defect states related energy levels in the bandgap of the SiN x host matrix such as silicon‐related defects, for example, which absorb the energetic photons and transfer the energy to the resonant energy levels of Tb 3+ ( 5 G 6 , 5 D 3 ‐ 7 F 6 , 5 D 3 ‐ 7 F 4 , 5 D 4 ‐ 7 F 6 ). This dipole‐dipole interaction process is at the origin of the excitation of Tb 3+ ions even under nonresonant wavelength …”